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Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide
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TLDR
In this article, the effects of boron and phosphorus doping on structural, optical, and electrical properties of amorphous and microcrystalline silicon carbide films have been investigated.Abstract:
Amorphous and microcrystalline silicon carbide, undoped and doped, has attracted a great attention for its optical and electrical properties. The introduction of dopant atoms in the network of amorphous films permits the control of electrical properties but it gives rise to a decreasing of the optical gap. Microcrystalline SiC:H films seem to provide films having a wide range of electrical conductivities without drastic change in the optical gap. This paper presents the results of a detailed study on the effects of boron and phosphorus doping on structural, optical, and electrical properties of a‐SiC:H and μc‐SiC:H films. An optical gap as high as 2.1 eV, together with a conductivity of 10−3 Ω−1 cm−1, are shown by doped μc‐SiC:H.read more
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References
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Journal ArticleDOI
Structural interpretation of the vibrational spectra of a-Si: H alloys
TL;DR: In this article, the ir and Raman spectra of Si: H alloys produced by plasma decomposition of Si${\mathrm{H}}_{4}$ are studied for a wide range of deposition conditions.
Journal ArticleDOI
Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
TL;DR: In this article, the formation kinetics of μc-Si:H has been investigated through the film depositions and plasma diagnoses in widely-scanned glow discharge plasma conditions; RF power density, SiH 4 /H 2 ratio and substrate temperature.
Book
Amorphous silicon and related materials
TL;DR: In this article, the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials are presented, each contribution is authored by an outstanding expert in that particular area.
Journal ArticleDOI
Chemical effects on the frequencies of Si-H vibrations in amorphous solids
TL;DR: In this article, it was shown that the frequencies of the bond-stretching vibrations of Si-H groups in amorphous solids vary systematically with the electronegativities of the next nearest neighbor atoms of the network.