Journal ArticleDOI
Chemical effects on the frequencies of Si-H vibrations in amorphous solids
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In this article, it was shown that the frequencies of the bond-stretching vibrations of Si-H groups in amorphous solids vary systematically with the electronegativities of the next nearest neighbor atoms of the network.About:
This article is published in Solid State Communications.The article was published on 1979-02-01. It has received 520 citations till now. The article focuses on the topics: Amorphous solid & Network covalent bonding.read more
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Hydrogen in crystalline semiconductors
TL;DR: A review of the properties of hydrogen in crystalline semiconductors is presented in this paper, together with the reactions of atomic hydrogen with shallow and deep level impurities that passivate their electrical activity.
Journal ArticleDOI
Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon
TL;DR: In this paper, it is shown that the integrated strength of the bond stretching bands in hydrogenated amorphous silicon cannot be used to determine the hydrogen concentration because the local effective charge for ir absorption is a function of hydrogen concentration and sample preparation.
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Properties and structure of a‐SiC:H for high‐efficiency a‐Si solar cell
TL;DR: A series of experimental investigations on optical and optoelectronic properties of methane and ethylene-based a−SiC:H films has been made as mentioned in this paper, and the chemical bonding structure of two kinds of a− SiC: H films has also been explored from infrared (IR) absorption structural analysis.
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Semiquantitative Study of the EDC/NHS Activation of Acid Terminal Groups at Modified Porous Silicon Surfaces
S. Sam,Larbi Touahir,J. Salvador Andresa,Philippe Allongue,J.-N. Chazalviel,Anne Chantal Gouget-Laemmel,C. Henry de Villeneuve,Anne Moraillon,François Ozanam,Noureddine Gabouze,S. Djebbar +10 more
TL;DR: This work rationalizes the different reaction paths and optimize the reaction conditions to obtain as pure as possible succinimidyl ester-terminated surfaces and maps the surface composition after activation was constructed by systematically varying the solution composition.
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Journal ArticleDOI
Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
TL;DR: In this article, the number and nature of the silicon-hydrogen bonds in amorphous silicon films prepared in plasmas either of silane or of hydrogen and argon were studied.
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The hydrogen content of plasma‐deposited silicon nitride
William A. Lanford,M. J. Rand +1 more
TL;DR: The hydrogen content of glow-dischargedeposited silicon nitride (SiN) films made at 330-350°C has been determined in this article, using the resonant nuclear reaction 15N+H→12C+4He+γ ray.
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The relative Raman cross sections of vitreous SiO2, GeO2, B2O3, and P2O5
TL;DR: In this paper, the relative HH Raman spectra obtained from high-purity bulk samples of the primary glass formers SiO2, GeO 2, B2O3, and P2O5 are reported.
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Vibrational properties of amorphous Si and Ge
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Hydrogen bonding in silicon-hydrogen alloys
TL;DR: In this paper, the Raman spectra have been obtained from thin films of silicon-hydrogen and siliconhydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH 4/D2/Ar respectively.