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Journal ArticleDOI

Influence of transverse modes on the dynamic response of vertical cavity surface emitting lasers

Siu Fung Yu, +1 more
- Vol. 143, Iss: 3, pp 189-194
TLDR
In this paper, a quasi-three-dimensional dynamic model is developed to investigate the multimode operation of index guided vertical cavity surface emitting lasers, and the stability of single mode operation of VCSE is analyzed.
Abstract
A quasi three-dimensional dynamic model is developed to investigate the multimode operation of index guided vertical cavity surface emitting lasers. Detailed index profiles of lasers such as dielectric quarter-wave Bragg reflectors are considered for the compuation of optical field distribution. In addition, current spreading, carrier diffusion and spatial hole burning are taken into consideration. Optical fields, carrier concentration and resonant frequency of the transverse modes are calculated in a self-consistent manner by the time domain algorithm and beam propagation method. Using this model, the stability of single mode operation of vertical cavity surface emitting lasers is analysed.

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Citations
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Book ChapterDOI

III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers

TL;DR: In this article, temperature-dependent phenomena in vertical-cavity surface-emitting lasers (VCSELs) have been discussed, including the temperature dependence of the longitudinal mode spectra, the transverse-mode structure, the threshold current, and the output power.
Journal ArticleDOI

Semiconductor lasers using diffused quantum-well structures

TL;DR: In this article, the relative merits and prospects of using diffused quantum-well (QW) structures in semiconductor lasers are assessed and compared, and the optical properties of diffused QWs are studied.
Journal ArticleDOI

Long-wavelength MEMS tunable vertical-cavity surface-emitting lasers with high sidemode suppression

TL;DR: In this article, a micromechanically tunable long-wavelength vertical-cavity surface-emitting laser with a buried tunnel junction aperture and a stable half-symmetric cavity for full mode control is presented.
Journal ArticleDOI

Carrier diffusion inside active regions of gain-guided vertical-cavity surface-emitting lasers

TL;DR: In this article, the radial carrier diffusion process inside active regions of gain-guided vertical-cavity surface-emitting lasers (VCSELs) is studied rigorously.
Journal ArticleDOI

Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers

TL;DR: In this paper, a numerical model for investigating the thermal, electrical, and optical characteristics of vertical-cavity surface-emitting: lasers (VCSELs) with a diffused quantumwell (QW) structure is presented.
References
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Book

Long-wavelength semiconductor lasers

TL;DR: In this paper, the current status and future applications of lightwave transmission of longwavelength semiconductor lasers emitting near 1.3 and 1.55-mu m are described, and bit-error-rate curves for a transmission experiment at 8 Gb/s over 76 km of fiber are shown.
Journal ArticleDOI

Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers

TL;DR: In this paper, the spontaneous emission spectrum is converted to a gain spectrum from which changes in the imaginary part of the refractive index can be calculated as the laser is excited from low current up to threshold.
Journal ArticleDOI

Dynamic analysis of radiation and side-mode suppression in a second-order DFB laser using time-domain large-signal traveling wave model

TL;DR: In this paper, a relatively simple algorithm was developed to calculate the large-signal dynamic response of DFB lasers by solving the time-dependent coupled wave equations directly in the time domain.
Journal ArticleDOI

Spatial holeburning effects on the dynamics of vertical cavity surface-emitting laser diodes

TL;DR: In this article, the authors studied the dynamic evolution of transverse modes in VCSELs and found that spatially separated modes can coexist by sharing the available gain, whereas strong competition occurs between modes that have a strong spatial overlap.
Journal ArticleDOI

Stationary and transient thermal properties of semiconductor laser diodes

TL;DR: Theoretical stationary and transient temperature rises are calculated using Fourier and Laplace transformations as discussed by the authors, where the effects of inhomogeneous heat flow to a submount and heat radiation from the diode surface into the ambient atmosphere are taken into account in the calculation.
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