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Patent

Integrated circuit for a chemical-selective sensor with voltage output

TLDR
An integrated circuit for a miniaturized solid-state chemical sensor as mentioned in this paper includes a chemical-selective membrane which provides an electric signal in response to contact with a particular chemical or group of chemicals in a fluid.
Abstract
An integrated circuit for a miniaturized solid-state chemical sensor. The integrated circuit includes a chemical-selective membrane which provides an electric signal in response to contact with a particular chemical or group of chemicals in a fluid. The chemical-selective membrane is attached to the integrated circuit by a membrane definition layer. An electrically conductive layer beneath the membrane definition layer provides electrical contact between the chemical-selective membrane and one of the input transistors of the voltage-follower amplifier. The chemical-selective membrane is formed separately from the gate of the input transistors and is designed as a integrated input to the amplifier. The output of the chemical sensor is a low impedance electric signal represented as a voltage which corresponds to the chemical activity present at the chemical-selective membrane/fluid interface. In one embodiment, multiple chemical sensors are fabricated on a single integrated circuit wherein each chemical-selective sensor forms an integrated input to a separate amplifier. Included on the integrated circuit of that embodiment is circuitry to allow for multiplexing of the outputs of the amplifiers to one or both of two output pads provided on the integrated circuit.

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Citations
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References
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Journal ArticleDOI

Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements

TL;DR: The development of an ion-sensitive solid-state device that combines the principles of an MOS transistor and a glass electrode and can be used for measurements of ion activities in electrochemical and biological environments is described.
Journal ArticleDOI

A hydrogen−sensitive MOS field−effect transistor

TL;DR: In this paper, an MOS transistor with 10−nm silicon dioxide as gate insulator and 10 −nm palladium as gate electrode was fabricated and the threshold voltage of this transistor was found to be a function of the partial pressure of hydrogen in the ambient atmosphere.
Journal ArticleDOI

Development, Operation, and Application of the Ion-Sensitive Field-Effect Transistor as a Tool for Electrophysiology

TL;DR: A new solid-state device has been developed that makes it possible to measure ion activities without using a reference electrode and has the properties of both a glass electrode and a field-effect transistor.
Journal ArticleDOI

Methods of isfet fabrication

TL;DR: The first ISFET was reported by Bergveld as mentioned in this paper, where the metal gate electrode was removed in order to expose the underlying msulator layer to solution, and the gate msulator played the role of an ion selective electrode.