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Journal ArticleDOI

Integrated physics-oriented statistical modeling, simulation, and optimization (MESFETs)

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TLDR
In this paper, a large-signal physics-based model is integrated into the harmonic balance equations for simulation of nonlinear circuits, involving an efficient Newton update, and exploited in a gradient-based FAST (feasible adjoint sensitivity technique) circuit optimization technique.
Abstract
Physics-based modeling of MESFETs is addressed from the point of view of efficient simulation, accurate behavior prediction and robust parameter extraction. A novel integration of a large-signal physics-based model into the harmonic balance equations for simulation of nonlinear circuits, involving an efficient Newton update, is presented and exploited in a gradient-based FAST (feasible adjoint sensitivity technique) circuit optimization technique. For yield-driven MMIC design a relevant physics-based statistical modeling methodology is presented. Quadratic approximation of responses and gradients suitable for yield optimization is discussed. The authors verify their theoretical contributions and exemplify their computational results using built-in and user-programmable modeling capabilities of the CAE systems OSA90/hope and HarPE. Results of device modeling using a field-theoretic nonlinear device simulator are reported. >

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Citations
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Journal ArticleDOI

A neural network modeling approach to circuit optimization and statistical design

TL;DR: This paper presents a new approach to microwave circuit optimization and statistical design featuring neural network models at either device or circuit levels, which has the capability to handle high-dimensional and highly nonlinear problems.
Journal ArticleDOI

Computer-aided optimization of nonlinear microwave circuits with the aid of electromagnetic simulation

TL;DR: Some modern trends in nonlinear (NL) microwave circuit optimization based on electromagnetic (EM) simulation are discussed, including space mapping, domain partitioning, and neural-network modeling of the passive subnetwork and/or of its most critical parts.
Proceedings Article

Nonlinear circuit design using the modified harmonic balance algorithm

R. Gilmore
TL;DR: In this paper, doubleur de frequence a transistor a effet de champ, conception d'un amplificateur de puissance avec reduction de la distorsion d'intermodulation, amplificateurs limiteur
Proceedings ArticleDOI

Analysis and optimization of microwave circuits and devices using neural network models

TL;DR: This paper presents a new approach to microwave circuit analysis and optimization featuring neural network models at either device or circuit levels, which has the potential to handle high-dimensional and highly nonlinear problems.
Journal ArticleDOI

High-Frequency Characteristic Fluctuations of Nano-MOSFET Circuit Induced by Random Dopants

TL;DR: In this article, the discrete-dopant-induced high-frequency characteristic fluctuation of 16-nm-gate metal-oxide-semiconductor field effect transistors (MOSFET) circuit under high frequency regime is quantitatively studied.
References
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Journal ArticleDOI

A Unipolar "Field-Effect" Transistor

Shockley
Journal ArticleDOI

A piecewise harmonic balance technique for determination of periodic response of nonlinear systems

TL;DR: In this paper, a new method for the solution of nonlinear periodic networks has been developed, where the network is decomposed into a minimum number of linear and nonlinear subnetworks.
Journal ArticleDOI

State of the art and present trends in nonlinear microwave CAD techniques

TL;DR: A survey of modern nonlinear CAD techniques as applied to the specific field of microwave circuits shows that the various subjects are not just separate items, but rather can be chained in a strictly logical sequence.
Book

Dynamics of feedback systems

A. I. Mees
Journal ArticleDOI

Determination of the basic device parameters of a GaAs MESFET

TL;DR: In this paper, the active channel properties of a gallium arsenide (GaAs) metal-semiconductor field effect transistor (mesfet) were determined using simple analytical expressions developed in terms of the geometrical and material parameters of a device.
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