Journal ArticleDOI
Integrated physics-oriented statistical modeling, simulation, and optimization (MESFETs)
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TLDR
In this paper, a large-signal physics-based model is integrated into the harmonic balance equations for simulation of nonlinear circuits, involving an efficient Newton update, and exploited in a gradient-based FAST (feasible adjoint sensitivity technique) circuit optimization technique.Abstract:
Physics-based modeling of MESFETs is addressed from the point of view of efficient simulation, accurate behavior prediction and robust parameter extraction. A novel integration of a large-signal physics-based model into the harmonic balance equations for simulation of nonlinear circuits, involving an efficient Newton update, is presented and exploited in a gradient-based FAST (feasible adjoint sensitivity technique) circuit optimization technique. For yield-driven MMIC design a relevant physics-based statistical modeling methodology is presented. Quadratic approximation of responses and gradients suitable for yield optimization is discussed. The authors verify their theoretical contributions and exemplify their computational results using built-in and user-programmable modeling capabilities of the CAE systems OSA90/hope and HarPE. Results of device modeling using a field-theoretic nonlinear device simulator are reported. >read more
Citations
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A neural network modeling approach to circuit optimization and statistical design
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Computer-aided optimization of nonlinear microwave circuits with the aid of electromagnetic simulation
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Proceedings Article
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Proceedings ArticleDOI
Analysis and optimization of microwave circuits and devices using neural network models
TL;DR: This paper presents a new approach to microwave circuit analysis and optimization featuring neural network models at either device or circuit levels, which has the potential to handle high-dimensional and highly nonlinear problems.
Journal ArticleDOI
High-Frequency Characteristic Fluctuations of Nano-MOSFET Circuit Induced by Random Dopants
Yiming Li,Chih-Hong Hwang +1 more
TL;DR: In this article, the discrete-dopant-induced high-frequency characteristic fluctuation of 16-nm-gate metal-oxide-semiconductor field effect transistors (MOSFET) circuit under high frequency regime is quantitatively studied.
References
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Steady-state analysis of nonlinear circuits with periodic inputs
T.J. Aprille,T.N. Trick +1 more
TL;DR: A Newton algorithm is defined which converges to the steady-state response rapidly and is applied to several nonlinear circuits, showing a considerable reduction in the amount of time necessary to compute the steady -state response.
Journal ArticleDOI
A MESFET Model for Use in the Design of GaAs Integrated Circuits
TL;DR: In this paper, a MESFET model is presented that is suitable for use in conventional, time-domain circuit simulation programs, and the parameters of the model are evaluated either from experimental data or from more detailed device analysis.
Journal ArticleDOI
Analysis of nonlinear systems with multiple inputs
TL;DR: Analytical modeling of communication receivers to account for their nonlinear response to multiple input signals is discussed, based on the application of the Wiener-Volterra analysis of nonlinear functionals.
Journal ArticleDOI
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers
W.R. Curtice,M. Ettenberg +1 more
TL;DR: In this article, a nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data.
Journal ArticleDOI
Simulation of Nonlinear Circuits in the Frequency Domain
TL;DR: The method of harmonic balance is reviewed as a general approach to converting a set of differential equations into a nonlinear algebraic system of equations that can be solved for the periodic steady-state solution of the original differential equations.