Journal ArticleDOI
Ion‐beam‐assisted etching of diamond
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TLDR
In this article, an ion-beam-assisted diamond etching system was proposed to achieve an etching rate of 200 nm/min with a ratio of 20 between the diamond and an aluminum mask.Abstract:
The high thermal conductivity, low rf loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. We report on an alternative approach which uses a Xe+ beam and a reactive gas flux of NO2 in an ion‐beam‐assisted etching system. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.read more
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Journal ArticleDOI
Low-Pressure, Metastable Growth of Diamond and "Diamondlike" Phases
John C. Angus,Cliff C. Hayman +1 more
TL;DR: Vapor-grown diamond and diamondlike materials may have eventual applications in abrasives, tool coatings, bearing surfaces, electronics, optics, tribological surfaces, and corrosion protection.
Journal ArticleDOI
Diamond—Ceramic Coating of the Future
TL;DR: On etudie le depot chimique en phase vapeur et la croissance cristalline de revetement de diamant as mentioned in this paper, etudies le depot chambre et le departement chimique.
Journal ArticleDOI
Diamond cold cathode
Michael W. Geis,N.N. Efremow,J.D. Woodhouse,M.D. McAleese,M. Marchywka,D.G. Socker,Jean-François Hochedez +6 more
TL;DR: In this article, current densities of 0.1 to 1 A-cm/sup -2/ are estimated for a diode current of 10 mA for a Si cold cathode.
Journal ArticleDOI
A new surface electron-emission mechanism in diamond cathodes
Michael W. Geis,N. N. Efremow,K. E. Krohn,J.C. Twichell,Theodore M. Lyszczarz,R. Kalish,James A. Greer,M. D. Tabat +7 more
TL;DR: In this article, an electron-emission mechanism for cold cathodes is described based on the enhancement of electric fields at metal-diamond-vacuum triple junctions.
Journal ArticleDOI
High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond
TL;DR: In this article, point contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond and the first report of diamond transistors that have power gain was made.