Journal ArticleDOI
Iteration methods for calculating self-consistent fields in semiconductor inversion layers
TLDR
In this paper, two new methods for attaining convergence in self-consistent field calculations are described, which have been applied to semiconductor inversion layers at finite temperature, and have been shown to achieve a significant improvement in the performance.About:
This article is published in Journal of Computational Physics.The article was published on 1970-08-01. It has received 115 citations till now.read more
Citations
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Journal ArticleDOI
A Calculation of Atomic Structures. By D. R. Hartree Pp. xiii, 181. 40s. 1957. (Wiley, New York)
Journal ArticleDOI
Iteration scheme for the solution of the two-dimensional schrodinger-poisson equations in quantum structures
TL;DR: In this article, a fast and robust iterative method for obtaining selfconsistent solutions to the coupled system of Schrodinger's and Poisson's equations is presented, where a simple expression describing the dependence of the quantum electron density on the electrostatic potential is derived.
Journal ArticleDOI
Plasmons and magnetoplasmons in semiconductor heterostructures
TL;DR: In this article, the status of the theory and experiment which can contribute to our knowledge of plasmon excitations in synthetic semiconductor heterostructures is surveyed. But, beyond the presentation of the results achieved, there is a need to examine carefully the methodologies employed to obtain such results.
Journal ArticleDOI
Self‐consistent calculation of electron and hole inversion charges at silicon–silicon dioxide interfaces
TL;DR: In this article, the charge distribution at a semiconductor insulator interface has been calculated, both for holes and electrons, by solving Schrodinger's and Poisson's equations self-consistently for particles obeying Fermi-Dirac statistics.
Journal ArticleDOI
Multilayer Black Phosphorus as a Versatile Mid-Infrared Electro-optic Material
TL;DR: Simulation results show that operating black phosphorus thin films in the quantum-confined Franz-Keldysh regime can improve the maximal attainable absorption as well as power efficiency compared to its graphene counterpart.
References
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Journal ArticleDOI
Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
Frank Stern,W. E. Howard +1 more
TL;DR: In this article, the authors generalized the energy-level calculation to include arbitrary orientations of the constant energy ellipsoids in the bulk, the surface or interface, and an external magnetic field.