Patent
Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
Koichiro Tanaka,Shunpei Yamazaki +1 more
TLDR
In this paper, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate.Abstract:
In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.read more
Citations
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Semiconductor device, and manufacturing method thereof
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Laser irradiation apparatus
TL;DR: In this article, the uniformity of laser annealing can be improved by the minimum number of homogenizers, which is shown to be the case in the case of linear laser light.
References
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Patent
Method for manufacturing a semiconductor device
TL;DR: In this paper, a semiconductor wafer of such structure that structures with a low mechanical strength, such as suspended microstructures, are exposed at a surface thereof, detachable adhesive sheet making up protective caps for the respective suspended micro structures are formed over the semiconductor Wafer.
Patent
Laser processing method and laser processing apparatus
TL;DR: In this article, the authors present a method for cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, where a pulse laser beam is radiated on the predetermined cut line, and a modified area is formed inside the work along the determined cut line by moving the condensed point along the predetermined cutoff point, whereby the work can be cut with a rather small force by starting from the modified area.
Patent
Method for producing semiconductor device
Abstract: In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
Patent
Manufacture of semiconductor
Ro Toshitami,Uenishi Toshimi,Wakabayashi Yuji,Ishiguro Takeshi,Takahashi Mikio,Fukui Masahiro,Tsuji Kazuhiko,Funakoshi Hisashi,Dansui Yoshitaka,Aoi Nobuo,Sakai Hiroko,Kawasaki Satoko +11 more
TL;DR: In this article, the authors proposed to reduce dusts under a ceiling of a carrier conveying space by so inclining the ceiling of the space in an apparatus for manufacturing semiconductor that its outside is lowered.
Patent
Laser irradiation apparatus
TL;DR: In this article, the uniformity of laser annealing can be improved by the minimum number of homogenizers, which is shown to be the case in the case of linear laser light.