Journal ArticleDOI
Lifetime measurement in Hg0.7Cd0.3Te by population modulation
TLDR
In this article, a new contactless optical modulation technique for the determination of photogenerated carrier lifetimes in semiconductors is presented, which consists of measuring the modulation in the transmitted intensity of a dc probe beam due to a modulated pump beam (h/ω≳Eg).Abstract:
A new contactless optical modulation technique for the determination of photogenerated carrier lifetimes in semiconductors is presented. The technique consists of measuring the modulation in the transmitted intensity of a dc probe beam (h/ω<Eg) due to a modulated pump beam (h/ω≳Eg). The fractional change in the probe beam transmission is proportional to the excess carrier lifetime. Data are presented for lifetimes of 0.1–4 μ sec measured by this technique in p‐type and near‐intrinsic Hg0.7Cd0.3Te samples at 300 K.read more
Citations
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Journal ArticleDOI
Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects
Samuel E. Schacham,E. Finkman +1 more
TL;DR: In this paper, the authors analyzed the lifetime of HgCdTe with the combined Auger 7 and radiative mechanisms, where the Auger process was more effective for low x values.
Journal ArticleDOI
The impact of characterization techniques on HgCdTe infrared detector technology
TL;DR: In this article, the authors focus on two specific HgCdTe devices that have achieved widespread application for infrared detection in the LWIR and VLWIR spectral regions: the simple n-type photoconductor and the P-on-n LPE heterojunction photodiode.
Journal ArticleDOI
Comparison and competition between MCT and QW structure material for use in IR detectors
TL;DR: In this paper, the authors compared mercury cadmium telluride (MCT) with quantum well structures as infrared detection materials, especially for 8-14 μm, and discussed their limitations and disadvantages and the current state of the art.
Journal ArticleDOI
Nondestructive technique to measure bulk lifetime and surface recombination velocities at the two surfaces by infrared absorption due to pulsed optical excitation
TL;DR: In this article, the authors extended the work of Luke and Cheng [J. Appl. Phys. 61, 2282 (1987) to account for the asymmetric case of different surface recombination velocities at the two wafer surfaces.
Journal ArticleDOI
Minority carrier lifetime in doped and undoped p-type CdxHg1-xTe
D E Lacklison,P Capper +1 more
TL;DR: In this paper, the four recombination mechanisms that are most important for p-type CdxHg1-xTe are discussed and compared to the experimental results, and an analysis of lifetime versus temperature variations suggests that the Auger-7 recombination mechanism is not important for P-type material grown by the Bridgman technique.
References
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
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