Patent
Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
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TLDR
In this article, a GaN-based LED element is mounted face-down on a Si diode element 2 formed in a silicon substrate, where electrical connections are provided via Au microbumps.Abstract:
A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13 a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13 b via an Au wire 17.read more
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References
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Patent
High efficiency light emitting diodes from bipolar gallium nitride
TL;DR: In this paper, the authors proposed a method of growing intrinsic, substantially undoped single crystal gallium nitride with a donor concentration of 7×10 17 cm -3 or less.
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TL;DR: In this paper, a gallium nitride-based III-V Group compound semiconductor device has been proposed, where an ohmic electrode is formed of a metallic material, and has been annealed.
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