Journal ArticleDOI
Magnetic-field-sensitive multicollector n-p-n transistors
V. Zieren,B.P.M. Duyndam +1 more
TLDR
In this article, the dependence of output signals on bias conditions, which influence the emitter and collector-current distribution, is analyzed theoretically for both two-and four-collector structures.Abstract:
A recently introduced type of magnetic-field-sensitive silicon microtransducer is described. These devices consist of a multicollector n-p-n transistor fabricated with standard integration techniques. The dependence of output signals on bias conditions, which influence the emitter and collector-current distribution, is analyzed theoretically for both two- and four-collector structures. These one- and two-dimensional vector sensors have been fabricated and tested. The experimental results are compared qualitatively with the theory. Theory and measurements indicate that the two-collector structure gives a differential collector-output current, which is linearly proportional to a magnetic induction, applied along one axis only. Theory and measurements also indicate that the vector sensor gives output signals, which are a linear function of the two components of an in-plane magnetic-induction vector. Consequently, this device is capable of measuring the magnitude and direction of such a vector.read more
Citations
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Journal ArticleDOI
Integrated semiconductor magnetic field sensors
Henry Baltes,Radivoje Popovic +1 more
TL;DR: In this article, the authors present a review of magnetic field sensors based on III-V semiconductors, including Hall plates, magnetic field effect transistors, vertical and lateral bipolar magnetotransistors, magnetodiodes, and current domain magnetometers.
Journal ArticleDOI
A CMOS-compatible 2-D vertical Hall magnetic-field sensor using active carrier confinement and post-process micromachining
TL;DR: In this paper, a CMOS-based magnetic field sensor for the detection of magnetic-field vector components that occur parallel to the chip surface is presented, which employs two vertical Hall plate structures embedded in the substrate orthogonal to each other.
Journal ArticleDOI
Future of IC microtransducers
TL;DR: SOLIDIS as discussed by the authors is a simulation toolbox for coupled numerical modelling of electrical, magnetic, thermal and mechanical effects. IC microtransducers are sensors or actuators based on industrial CMOS or bipolar integrated circuit technology combined with additional bulk or surface micromachining, thin-film deposition or electroplating.
Journal ArticleDOI
A lateral magnetotransistor structure with a linear response to the magnetic field
TL;DR: In this article, an experimental study and analytical model of a novel magnetotransistor was presented and very high sensitivities were measured, on the order of 3000%/T.
Journal ArticleDOI
Bipolar magnetotransistor sensors. An invited review
TL;DR: A comprehensive review of bipolar magnetotransistor (BMT) sensors is presented in this paper, where the fundamental physical principles that determine magnet transistors' action, depending on the specific design and operating conditions, are discussed.
References
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Journal ArticleDOI
The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
TL;DR: In this paper, simple analytic expressions are derived for the variation of base current, emitter current and emitter-base voltage along the emitter junction of a transistor structure due to the flow of dc base current parallel to the Emitter junction.
Journal ArticleDOI
The Hall effect and related phenomena
TL;DR: In this article, a review of the theory of the Hall effect and related phenomena in solids is presented, and specific parameters useful in characterizing a material for Hall effect applications, including the dependence of the parameters on temperature and impurity content.
Journal ArticleDOI
Differential amplification magnetic sensor
S. Takamiya,K. Fujikawa +1 more
TL;DR: In this article, the relationship between electromagnetic characteristics of the differential amplification magnetic sensor (DAMS) and impurity atom density and effective thickness of the Hall region is analyzed, assuming a simplified model, and it is shown that a magnetic sensitivity of higher than 10 V/kG (with a load resistance of 10 kΩ) and a noise-equivalent magnetic flux density of less than 0.1 m/Hz1/2 can be obtained when the effective thickness is well designed.
Patent
Semiconductive magnetic transducer
TL;DR: In this article, a transistor having two collectors is subject to a magnetic field, which causes deflection of the charge carriers flowing to the collectors, the difference in currents produced being amplified in an integrated differential amplifier circuit containing the transistor.