Patent
Mask for exposure and its production and production of semiconductor device
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TLDR
In this paper, a halftone type phase shift mask has translucent patterns of the reference transmittance and the phase difference to light passing a light transmissible substrate is defined.Abstract:
PURPOSE: To provide a halftone type phase shift mask which is formed within a permissible range of a phase difference and transmittance by distinctly defining this permissible range CONSTITUTION: This halftone type phase shift mask has translucent patterns of the reference transmittance T formed out of a film which is translucent and has the phase difference to light passing a light transmissible substrate on this light transmissible substrate The range of the phase difference and the transmittance where a relative depth of focus of >=90% is obtainable at an exposing wavelength of 365nm is indicated on a plane defining the transmittance of the translucent film patterns and the phase difference to the light transmissible substrate at X- and Y-axes A square shape inscribing the range of the phase difference and transmittance indicated on this plane is regulated by the coordinates at its vertex The phase difference and transmittance of the translucent film patterns are so set as to attain the values within this square shaperead more
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Patent
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