Journal ArticleDOI
Measurement of Film Thickness Using Infrared Interference
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TLDR
In this paper, a technique for measuring the thickness of silicon films grown epitaxially on sapphire is described, which is performed in situ and can be used to monitor film thickness while the film is growing.Abstract:
A technique for measuring the thickness of silicon films grown epitaxially on sapphire is described. The method is nondestructive, is performed in situ, and can be used to monitor film thickness while the film is growing. The method utilizes the infrared emission from the sapphire substrate and from the growing film. The radiation from the sapphire substrate is partially transmitted through the silicon and partially reflected in the silicon, establishing an interference pattern which can be used to determine silicon film thickness. Using a detector with peak sensitivity at 2.4 μ, silicon film thicknesses to the nearest ±0.1 μ are readily measurable. The absolute accuracy of ±0.1 μ is independent of film thicknesses. Films in the range from 0.1 to 15 μ have been measured. Increased detector sensitivity can extend the maximum measurable film thickness.read more
Citations
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Journal ArticleDOI
The preparation, characterization and applications of silicon nitride thin films
Journal ArticleDOI
The preparation and properties of chemically vapor deposited silicon on sapphire and spinel
TL;DR: In this paper, a comparison between the semiconducting properties of thin silicon films epitaxially grown, by chemical vapor deposition processes, on single crystal sapphire and spinel is examined.
Book ChapterDOI
The Thermal Radiative Properties of Semiconductors
TL;DR: The spectral emissivity of a wafer affects the amount of radiation emitted at the pyrometer wavelength, and determines temperature measurement errors in pyrometry as discussed by the authors, and the total absorptivity is related to the efficiency of coupling lamp radiation to the wafer.
Journal ArticleDOI
Detection of liquid–vapor–solid triple contact line in two-phase heat transfer phenomena using high-speed infrared thermometry
TL;DR: In this article, the authors used high-speed infrared (IR) thermometry through an IR-transparent silicon wafer heater to detect the liquid-vapor-solid triple contact line.
Journal ArticleDOI
Deep levels within the forbidden gap of silicon-on-sapphire films
TL;DR: In this article, the Fermi level is being pinned by deep levels within the forbidden gap, which are tentatively associated with crystalline defects in the films and the possibility of precipitates occurring on these defects is considered.
References
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Journal ArticleDOI
Impurity Distribution in Epitaxial Growth
A. S. Grove,A. Roder,C. T. Sah +2 more
TL;DR: In this paper, a solid-state diffusion theory is developed giving the distribution of impurities in epitaxial growth, and it is shown that for most practical cases this theory takes on a particularly simple form.
Journal ArticleDOI
Grown-film silicon transistors on sapphire
C.W. Mueller,P.H. Robinson +1 more
TL;DR: In this article, a pyrolytic decomposition of SiH 4 on single crystal sapphire was used for depositing thin-film silicon devices with Hall mobility of 135 cm2/volt-second at a hole density of 1017/cm3.
Journal ArticleDOI
Interference Method for Measuring the Thickness of Epitaxially Grown Films
W. G. Spitzer,M. Tanenbaum +1 more
Journal ArticleDOI
Thickness measurement of silicon dioxide layers by ultraviolet-visible interference method
Edwin A. Corl,Hans Wimpfheimer +1 more
TL;DR: In this paper, a non-destructive technique was developed for measuring the thickness of silicon dioxide on polished silicon wafers using interference patterns obtained by scanning the ultraviolet-visible spectrum between 190 and 750 milli μ with a spectrophotometer.
Journal ArticleDOI
Die Temperaturabhängigkeit des Brechungsindex von Silizium
TL;DR: In this paper, the Antoncikschen Theorie der Abhangigkeit of the Brechungsindex of the homeopolaren Kristalle was studied, i.e., the unlinearity of the Abhanggkeitn = f(T) is unlinear, fur tiefe Temperaturen (T≳170°K) giltn∼T2.