Patent
Metal-insulator-semiconductor structures having reduced junction capacitance and method of fabrication
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TLDR
In this paper, a substantially intrinsic region was formed by implanting selected ions, which increased the space charge region of the adjacent junction, thus reducing the effective capacitance of metal-insulator-semiconductor structures.Abstract:
Metal-insulator-semiconductor structures characterized by reduced junction capacitance and methods of fabrication are disclosed. A substantially intrinsic region beneath the junction is formed by implanting selected ions. The ion implantation does not produce lateral diffusion of conventionally formed junctions, and therefore breakdown and packing density are not changed. The substantially intrinsic region does, however, increase the space charge region of the adjacent junction, thus reducing the effective capacitance. In the preferred method of fabrication, ions are implanted using the same mask employed in forming the p-n junction.read more
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References
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Semiconductor isolation structure and method of producing
TL;DR: In this article, a monocrystalline semiconductor body is provided with a subsurface insulating layer, which is produced by bombarding the body with ions such as nitrogen, oxygen and carbon, for a time sufficient to produce a dense layer of embedded ions and at an energy level sufficient to result in ion penetration to the desired sub-surface depth.
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