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Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements

Yunfei Ding
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TLDR
In this paper, a method and system for providing and utilizing a magnetic memory is described, which includes driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells.
Abstract: 
A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).

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Patent

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

Paul P. Nguyen, +1 more
TL;DR: In this article, a method and system for providing a magnetic element that can be used in a magnetic memory is disclosed, which includes pinned, nonmagnetic spacer, and free layers.
Patent

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

Steven M. Watts, +2 more
TL;DR: In this article, the magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic elements, and a non-magnetic spacer layer is provided between the pinned and free layers.
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Precessional spin current structure for mram

Mustafa Michael Pinarbasi, +1 more
TL;DR: In this paper, a magnetoresistive random access memory (MRAM) was proposed, which utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the inplane magnetization direction of the PSC magnetic layer is free to rotate.
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Spin transfer torque structure for MRAM devices having a spin current injection capping layer

Bartlomiej Adam Kardasz, +1 more
TL;DR: In this paper, a magnetoresistive random access memory (MRAM) device with a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer is described.
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STT-MRAM cell structure incorporating piezoelectric stress material

Jun Liu, +2 more
TL;DR: In this paper, a magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided, and the memory cells include a stack of layers, and a layer is formed as a layer in the stack or adjacent the layers of the cell stack.
References
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Journal ArticleDOI

Current-driven excitation of magnetic multilayers

John C. Slonczewski
- 01 Jun 1996 - 
TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
Patent

Magnetoresistive element and magnetic memory device

Koichiro Inomata, +4 more
TL;DR: In this paper, a magnetoresistive element has a double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layers/a second dielectric layer, and a third antiferrous layer.
Patent

Method of writing to scalable magnetoresistance random access memory element

Leonid Savtchenko, +5 more
TL;DR: In this article, a scalable magnetoresistive memory cell including the steps of providing a magnetoregressive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°.
Patent

Magnetic element utilizing spin transfer and an mram device using the magnetic element

Yiming Huai, +1 more
TL;DR: In this paper, a method and system for providing a magnetic element capable of being written using spin transfer effect while generating a high output signal and a magnetic memory using the magnetic element is disclosed.
Journal ArticleDOI

Spintronics: a retrospective and perspective

Stuart A. Wolf, +2 more
- 01 Jan 2006 - 
TL;DR: Studies of spin-polarized transport in bulk and low-dimensional semiconductor structures show promise for the creation of a hybrid device that would combine magnetic storage with gain-in effect, a spin memory transistor.