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Magnetoresistive element and magnetic memory device

Koichiro Inomata, +4 more
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TLDR
In this paper, a magnetoresistive element has a double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layers/a second dielectric layer, and a third antiferrous layer.
Abstract: 
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer

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Patent

Magnetoresistive element and magnetic memory

Tadaomi Daibou, +13 more
TL;DR: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second nonmagnetic layer placed between the first and the second magnetoresists; and a second interfacial magnetic layer between the second and the nonmagians as mentioned in this paper.
Patent

Storage element and memory

Yutaka Higo, +7 more
TL;DR: In this article, a storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with tunnel insulation layer, and with the direction of magnetization of storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction.
Patent

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

Paul P. Nguyen, +1 more
TL;DR: In this article, a method and system for providing a magnetic element that can be used in a magnetic memory is disclosed, which includes pinned, nonmagnetic spacer, and free layers.
Patent

High speed low power magnetic devices based on current induced spin-momentum transfer

Andrew D. Kent, +2 more
TL;DR: In this paper, a high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current was proposed.
Patent

Current switched magnetoresistive memory cell

James M. Daughton, +2 more
TL;DR: In this paper, a ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic Ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film.
References
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Journal ArticleDOI

Current-driven excitation of magnetic multilayers

John C. Slonczewski
- 01 Jun 1996 - 
TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
Journal ArticleDOI

Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.

Jagadeesh S. Moodera, +3 more
- 17 Apr 1995 - 
TL;DR: b, R/R, is 11.8%, 20%, and 24%, respectively, consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films, in qualitative agreement with Slonczewski's model.
Journal ArticleDOI

Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars

Jordan A. Katine, +4 more
- 03 Apr 2000 - 
TL;DR: Using thin film pillars approximately 100 nm in diameter, containing two Co layers of different thicknesses separated by a Cu spacer, this work examines the process by which the scattering from the ferromagnetic layers of spin-polarized currents flowing perpendicular to the layers causes controlled reversal of the moment direction in the thin Co layer.
Journal ArticleDOI

Current-Induced Switching of Domains in Magnetic Multilayer Devices

E. B. Myers, +4 more
- 06 Aug 1999 - 
TL;DR: Current-induced switching in the orientation of magnetic moments is observed in cobalt/copper/cobalt sandwich structures, for currents flowing perpendicularly through the layers, in accord with predictions that a spin-polarized current exerts a torque at the interface between a magnetic and nonmagnetic metal.
Patent

Magnetic memory array using magnetic tunnel junction devices in the memory cells

William J. Gallagher, +3 more
TL;DR: In this article, a nonvolatile magnetic random access memory (MRAM) is proposed, where each memory cell is a magnetic tunnel junction (MTJ) element and a diode electrically connected in series.