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Method for plasma etching a chromium layer suitable for photomask fabrication

Xiaoyi Chen, +6 more
TLDR
In this paper, a method for etching a chromium layer is described, which is particularly suitable for fabricating photomasks and can be used for plasma etching of chromium layers.
Abstract: 
A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.

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Patent

Semiconductor processing system and methods using capacitively coupled plasma

Jang-Gyoo Yang, +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
Patent

Semiconductor processing systems having multiple plasma configurations

Dmitry Lubomirsky, +2 more
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
Patent

Method and apparatus for photomask plasma etching

Ashok Kumar, +6 more
TL;DR: In this article, a method and apparatus for etching photomasks is described, which comprises a process chamber having a support pedestal adapted for receiving a photomask, an ion neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield.
Patent

Methods for etch of metal and metal-oxide films

Jingchun Zhang, +2 more
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
Patent

Methods for etch of sin films

Jingchun Zhang, +2 more
TL;DR: In this paper, a method of selectively etching silicon nitride from a substrate comprising a silicon oxide layer and a silicon dioxide layer is proposed. But the method requires the substrate to be exposed to the reactive gas in the gas reaction region of the substrate processing chamber.
References
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Patent

Method of etching patterned layers useful as masking during subsequent etching or for damascene structures

Yan Ye, +6 more
TL;DR: In this paper, a multi-layered masking structure is used, which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking materials or by a surface imageable organic masking mixture.
Patent

Method and apparatus for surface treatment by plasma

Keizo Suzuki, +4 more
TL;DR: In this article, a controller is used as a mechanism for changing the quantity of gas introduced in a vacuum chamber, according to a predetermined program, or by signals obtained by detecting the surface conditions of the specimen during the surface treatment.
Patent

Trench etch process for a single-wafer RIE dry etch reactor

Monte A. Douglas
TL;DR: In this paper, a plasma dry etch process for trench etching in single slice RIE etch reactors is described, where a selective sidewall passivation is accomplished to control the profile of the trench being etched.
Patent

Method and apparatus for photomask plasma etching

Ashok Kumar, +6 more
TL;DR: In this article, a method and apparatus for etching photomasks is described, which comprises a process chamber having a support pedestal adapted for receiving a photomask, an ion neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield.
Patent

Method of etching and cleaning using fluorinated carbonyl compounds

Timothy R. Demmin, +2 more
TL;DR: In this paper, a method comprising etching a material under plasma etching conditions using an etching composition which has a GWP of no greater than about 3000 and which comprises at least one etchant compound having a formula selected from the group consisting of FCO-CO-[(CR 1 R 2 ) m −CO] n −F and FCOCO-R 3 -CO-N −F, and wherein: m=0, 1, 2, 3, 4, or 5; n=1; R 1 & R 2 represent H, F or C