P
Peter K. Moon
Researcher at Intel
Publications - 31
Citations - 1074
Peter K. Moon is an academic researcher from Intel. The author has contributed to research in topics: Copper interconnect & Trench. The author has an hindex of 15, co-authored 31 publications receiving 1073 citations.
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Patent
Shallow trench isolation technique
TL;DR: In this paper, a method of forming a trench isolation region is described, which comprises the steps of forming an opening in a semiconductor substrate, oxidizing the opening a first time, and then etching the oxidized opening with a wet etchant comprising HF.
Proceedings ArticleDOI
A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects
Sunit Tyagi,Mohsen Alavi,Robert M. Bigwood,T. Bramblett,J. Brandenburg,W. Chen,B. Crew,Makarem A. Hussein,P. Jacob,C. Kenyon,C. Lo,B. McIntyre,Z. Ma,Peter K. Moon,P. Nguyen,L. Rumaner,R. Schweinfurth,Swaminathan Sivakumar,M. Stettler,Scott E. Thompson,B. Tufts,J. Xu,Simon Yang,M. Bohr +23 more
TL;DR: In this paper, a leading edge 130 nm generation logic technology with 6 layers of dual damascene Cu interconnects is reported, where dual Vt transistors are employed with 1.5 nm thick gate oxide and operating at 1.3 V.
Proceedings ArticleDOI
An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0.7 - 1.4 V
Scott E. Thompson,Mohsen Alavi,R. Arghavani,A. Brand,Robert M. Bigwood,J. Brandenburg,B. Crew,Valery M. Dubin,Makarem A. Hussein,P. Jacob,C. Kenyon,E. Lee,B. McIntyre,Z. Ma,Peter K. Moon,P. Nguyen,M. Prince,R. Schweinfurth,Swaminathan Sivakumar,Pete Smith,M. Stettler,S. Tyagi,M. Wei,J. Xu,Simon Yang,M. Bohr +25 more
TL;DR: In this paper, Tyagi et al. presented a leading edge 130 nm technology with 6 layers of Cu interconnects and 1.3 V operation, and a 5% linear shrink to reduce the 6-T SRAM cell to 2.00 µm.
Patent
Trench isolation process using nitrogen preconditioning to reduce crystal defects
TL;DR: In this article, a method of forming a trench isolation structure in a semiconductor substrate is described, where an oxide layer is formed within the trench and the surface of this layer is subjected to a nitrogen plasma.
Patent
Method for fabricating a transistor with increased hot carrier resistance by nitridizing and annealing the sidewall oxide of the gate electrode
TL;DR: In this paper, a method of fabricating a field effect transistor with increased resistance to hot carrier damage is disclosed, where an oxide is grown on the gate electrode and strengthened by nitridation and anneal.