Patent
Method for producing a pn-junction for a semiconductor device of SiC
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TLDR
In this paper, a method for producing a pn-junction for a semiconductor device of SiC intended to have at least one lateral zone of junction termination with a lower doping concentration of a first conductivity type than a main zone for smearing out the electrical field at said junction comprising at least the step of applying a first layer of siC over the entire surface and on top of a second layer ofSiC.Abstract:
A method for producing a pn-junction for a semiconductor device of SiC intended to have at least one lateral zone of junction termination with a lower doping concentration of a first conductivity type than a main zone for smearing out the electrical field at said junction comprising at least the step of applying a first layer of SiC over the entire surface and on top of a second layer of SiC. A mask is applied on the first layer over a portion thereof where said main zone and an ohmic contact are to be formed. It is after that etched through the first layer to the second layer while leaving a main zone of said first layer and a contact layer thereof under said mask.read more
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P-N junction diodes in silicon carbide
John A. Edmond,Robert F. Davis +1 more
TL;DR: In this article, a method of forming a diode which is operable at high temperature, at high power levels, and under conditions of high radiation density was proposed. But this method was not suitable for high temperature and power levels.