Patent
Method for transferring a semiconductor body from a growth substrate to a support material
Michael Kelly,Oliver Ambacher,Martin Stutzmann,Martin S. Brandt,Roman Dimitrov,Robert Handschuh +5 more
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TLDR
In this paper, the authors proposed a method for transferring a semiconductor body selected from the group consisting of a semiconducting layer, a substrate and a support material from a growth substrate to the support material.Abstract:
A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.read more
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Patent
Method for depositing a functional material on a substrate
TL;DR: In this article, an optically transparent plate having a first surface and a second surface with one or more wells is provided, which is then irradiated with a pulsed light to heat the layer of light absorbing material.
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Methods for forming selectively deposited thin films
TL;DR: In this paper, a method for selectively depositing a thin film structure on a substrate is described, which includes providing a process gas to a surface of the substrate and directing concentrated electromagnetic energy from a source of energy to at least a portion of the surface.
References
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Journal ArticleDOI
Extreme selectivity in the lift‐off of epitaxial GaAs films
TL;DR: In this paper, conditions for the selective lift-off of large area epitaxial AlxGa1−xAs films from the substrate wafers on which they were grown were discovered.
Patent
Separation of thin films from transparent substrates by selective optical processing
TL;DR: In this article, a thin GaN epitaxially grown on a sapphire substrate is separated from the substrate by laser irradiation at a wavelength at which the GaN is strongly absorbing, e.g., 248 nm.
Journal ArticleDOI
Optical patterning of GaN films
Michael K. Kelly,Oliver Ambacher,B. Dahlheimer,G. Groos,Roman Dimitrov,H. Angerer,Martin Stutzmann +6 more
TL;DR: In this article, a patterned etch of GaN films was achieved with laser-induced thermal decomposition, where high energy laser pulses were used to locally heat the film above 900°C, causing rapid nitrogen effusion.
Patent
Lift-off and subsequent bonding of epitaxial films
TL;DR: In this article, a method for removing an epitaxial film from a single crystal substrate upon which it is grown and adhering the films to second substrate and the resultant structure is presented.
Patent
Method of separating two layers of material from one another and electronic components produced using this process
Michael Kelly,Oliver Ambacher,Martin Stutzmann,Martin S. Brandt,Roman Dimitrov,Robert Handschuh +5 more
TL;DR: In this paper, a method of separating two layers of material from one another in such a way that the two separated layers are essentially fully preserved is proposed. But the method is not suitable for the case where the electromagnetic radiation is absorbed at the interface or in the region in the vicinity of the interface and the absorbed radiation energy induces a decomposition of material at the interfaces.