Patent
Method for treating a surface with a microwave or UHF plasma and improved apparatus
Jes Asmussen,Donnie K. Reinhard +1 more
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TLDR
In this article, a method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described, which can have a relatively large diameter (on the order of magnitude 50 centimeters).Abstract:
A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.read more
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Patent
Coupled microwave ECR and radio-frequency plasma source for plasma processing
Chin-Chi Tsai,Halsey H. Haselton +1 more
TL;DR: In this article, a dual-plasification device with a microwave discharge and a radio frequency (RF) plasma maintained between parallel plates is described. And the parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions and also assists in the RF plasma also operating at electron cyclotron resonance.
Patent
Remote exposure of workpieces using a plasma
TL;DR: In this paper, an OAUGD plasma is generated using paraelectric or peristaltic electrohydrodynamic (EHD) techniques in the plasma generator of a remote-exposure reactor, where one or more active species, especially oxidizing species, are convected away from the plasma generation region and directed towards a workpiece that is located outside of the plasma-generation region.
Patent
Hollow containers with inert or impermeable inner surface through plasma-assisted surface reaction or on-surface polymerization
TL;DR: In this paper, a very thin inner surface coating in a plastic or metal container without an undesirable increase in container surface temperature is provided to change the surface properties of the internal plastic surface of a container by reaction of the surface with a reactive gas which has been energized to produce a plasma, or the surface is activated by a plasma or reactive gas so that it becomes receptive to a further surface reaction.
Patent
High frequency semiconductor wafer processing apparatus and method
TL;DR: In this article, a nonconventional match network is used to enable elimination of reflections at higher frequencies, and automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time.
Patent
Plasma reactor using UHF/VHF and RF triode source, and process
TL;DR: In this paper, the triode (VHF/UHF split electrode plus RF wafer support electrode) is used to generate high density, low energy plasma inside a vacuum chamber for etching metals, dielectrics and semiconductor materials.
References
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Journal ArticleDOI
Plasma etching—A discussion of mechanisms
J. W. Coburn,Harold F. Winters +1 more
TL;DR: In this paper, the etching process is discussed in terms of three basic steps: adsorption, product formation, and product desorption with the goal of clarifying the relative importance of these three steps.
PatentDOI
Microwave plasma etching
TL;DR: In this paper, a microwave plasma etching system is described, which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, magnetic field forming means (7) for forming a magnetic field in the discharge space, microwave electric field forming (3), and substrate holding means (11) for holding substrates to be processed in the vacuum chamber.
Journal ArticleDOI
Silicon Oxidation in an Oxygen Plasma Excited by Microwaves
TL;DR: In this paper, a preliminary study of the oxidation of silicon by a moderate density oxygen gas plasma has provided two methods for oxidizing silicon rapidly at low temperatures, which allow for masking against the growth of the film.
Patent
Methods and apparatus for generating plasmas
TL;DR: In this article, a toroidal waveguide of rectangular cross-section connected to a microwave source is used to pre-ionize a reactive species, allowing independent control over the activation of both reactive species.
Journal ArticleDOI
A novel anisotropic dry etching technique
TL;DR: IBAE as mentioned in this paper is based upon the work of Coburn et al., and differs fundamentally from reactive ion etching (RIE), which relies upon a plasma to produce both the chemically active species and the energic ions.