Patent
Method of applying optical coatings of silicon compounds by cathode sputtering, and a sputtering cathode for the practice of the method
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TLDR
In this paper, a polycrystalline silicon casting of at least 99% silicon containing dopants from the group, boron, antimony, phosphorus and arseic, is sputtered by direct current in an atomsphere containing the reaction gas.Abstract:
Method of applying optical coatings of silicon compounds to substrates by reactive cathode sputtering of siliceous target materials. To solve the problem of improving the utilization of the target material and eliminating the blowout of particles from the target, the target of the invention is a polycrystalline silicon casting of at least 99% silicon containing dopants from the group, boron, antimony, phosphorus and arseic, and it is sputtered by direct current in an atomsphere containing the reaction gas.read more
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References
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Patent
Gradient doping in amorphous silicon
TL;DR: An amorphous silicon semiconductor having a gradient doping profile is produced by thermo-electrically diffusing an ionizable deposit material such as antimony or aluminum into the ammorphous silicon layer as mentioned in this paper.
Patent
Device fabrication procedure
TL;DR: In this article, a fabrication technique for making various devices in which a type of glass is used as a surface protection layer is described, and the glass layers are put down by particle bombardment (generally sputtering) of a borosilicate glass target.
Patent
Method of producing photoelectric transducers
Yasuharu Shimomoto,Toshihisa Tsukada,Akira Sasano,Yasuo Tanaka,Hideaki Yamamoto,Yukio Takasaki +5 more
TL;DR: In this paper, the photoconductive layer is formed on a predetermined substrate with an irregular surface by a method of depositing the photoconductor layer in the atmosphere including at least plasma, and the substrate with irregular surface is disposed above a first electrode to which an electrode is opposed.
Journal ArticleDOI
Doping Effects of Group-III and -V Element on a-Si Prepared by High Pressure rf Sputtering
TL;DR: In this article, the effects of group-III and group-V doping on a-Si films prepared by high pressure rf sputtering were studied and three different types of doping effects on conductivity were observed for different elements.
Patent
Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets
TL;DR: A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode as discussed by the authors.