Patent
Method of Forming Layout Design
Tung-Heng Hsieh,Lin Chung-Te,Sheng-Hsiung Wang,Hui-Zhong Zhuang,Min-Hsiung Chiang,Chiang Ting-Wei,Li-Chun Tien +6 more
Reads0
Chats0
TLDR
In this article, a method of forming a layout design for fabricating an integrated circuit (IC) is disclosed, which includes identifying one or more areas in the layout design occupied by one or many segments of a plurality of gate structure layout patterns.Abstract:
A method of forming a layout design for fabricating an integrated circuit (IC) is disclosed. The method includes identifying one or more areas in the layout design occupied by one or more segments of a plurality of gate structure layout patterns of the layout design; and generating a set of layout patterns overlapping the identified one or more areas. The plurality of gate structure layout patterns has a predetermined pitch smaller than a spatial resolution of a predetermined lithographic technology. A first layout pattern of the set of layout patterns has a width less than twice the predetermined pitch.read more
Citations
More filters
Patent
Semiconductor device having buried power rail
TL;DR: A semiconductor device includes: a substrate, a power rail on the substrate, an active layer on a substrate and at same layer as the power rail, and a contact electrically connecting power rail to the active layer as discussed by the authors.
Patent
Integrated circuit filler and method thereof
TL;DR: In this article, a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell including identifying at least one gap among a plurality of functional cells, is presented.
Patent
Integrated circuit, system for and method of forming an integrated circuit
Yang Jung-Chan,Chiang Ting-Wei,Kao Jerry Chang-Jui,Zhuang Hui-Zhong,Lee-Chung Lu,Li-Chun Tien,Meng-Hung Shen,Shang-Chih Hsieh,Lu Chi-Yu +8 more
TL;DR: In this article, an integrated circuit structure includes a set of gate structures, a first conductive structure, a second and third set of vias, and a first set of conductive structures.
Patent
Power grid of integrated circuit
TL;DR: In this article, a power grid includes first power traces disposed in a first metal layer and parallel to a first direction and second power traces in a second metal layer parallel to the first direction.
Patent
Leakage analysis on semiconductor device
TL;DR: In this article, a method is used to calculate a boundary leakage in a semiconductor device and an expected boundary leakage between the first cell and the second cell is calculated based on leakage current values associated with the cell abutment case.
References
More filters
Patent
System comprising a semiconductor device and structure
Zvi Or-Bach,Brian Cronquist,Israel Beinglass,Jan Lodewijk de Jong,Deepak C. Sekar,Zeev Wurman +5 more
TL;DR: In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Patent
Semiconductor device and structure
Zvi Or-Bach,Brian Cronquist +1 more
TL;DR: In this paper, a first layer and a second layer of layer-transferred mono-crystallized silicon, where the first layer comprises a first plurality of horizontally-oriented transistors, and the second layer includes a second plurality of vertically oriented transistors.
Patent
Trench gate type semiconductor device and method of producing the same
TL;DR: In this paper, a method of producing a trench gate type MOSFET is presented in which each intersection trench is formed as a two-stage trench structure, and a Schottky electrode is provided in the bottom of the intersection trench 10 p.
Patent
Method for automatically routing connections between top side conductors and bottom side conductors of an integrated circuit package
Alex Tain,Eric Tosaya +1 more
TL;DR: In this article, a method of routing connections of an integrated circuit package having a set of top-side conductors and bottom-side-conductors is presented. But the method is not suitable for the case of single-input single-output (SIMO) circuits.
Patent
Semiconductor system and device
TL;DR: In this article, a 3D IC based mobile system including a first semiconductor layer including first mono-crystallized transistors, where the first transistors are interconnected by at least one metal layer including aluminum or copper, is presented.