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Monte Carlo Device Simulation

Karl Hess
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The article was published on 1991-01-01. It has received 93 citations till now. The article focuses on the topics: Dynamic Monte Carlo method & Monte Carlo method in statistical physics.

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Electron transport and full-band electron-phonon interactions in graphene

TL;DR: In this paper, a full-band Monte Carlo simulator was developed to investigate electron transport in a single layer of graphite (graphene) and the electron and phonon dispersion curves of graphene were obtained by applying the tight-binding method to the two inequivalent atoms of the graphene unit cell, considering their nearest four neighbors.
Journal ArticleDOI

Recent advances in Wigner function approaches

TL;DR: The Wigner function has been widely used in quantum information processing and quantum physics as discussed by the authors, where it has been used to model the electron transport, to calculate the static and dynamical properties of many-body quantum systems.
Journal ArticleDOI

From structure to function in open ionic channels.

TL;DR: It is considered a simple working hypothesis that all permeation properties of open ionic channels can be predicted by understanding electrodiffusion in fixed structures, without invoking conformation changes, or changes in chemical bonds.
Journal ArticleDOI

Device simulation of charge collection and single-event upset

TL;DR: In this paper, the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years, is reviewed.
Journal ArticleDOI

Impact ionization coefficients of 4H silicon carbide

TL;DR: In this article, anisotropy of the impact ionization coefficients of 4H silicon carbide is investigated by means of the avalanche breakdown behavior of p+n diodes on (0001) and (112¯0) 4H carbide epitaxial wafers.
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