Journal ArticleDOI
On the growth of AlSb single crystals
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In this paper, the Czochralski method was used to grow large single crystals of aluminum antimonide with diameters of 1:1:1 in a crucible of alumina and carbon.About:
This article is published in Journal of Crystal Growth.The article was published on 1989-04-01. It has received 12 citations till now. The article focuses on the topics: Antimonide & Crystal growth.read more
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Room-temperature compound semiconductor radiation detectors
Douglas S. McGregor,Haim Hermon +1 more
TL;DR: A summary of the present status of several compound semiconductor radiation detectors, including detectors fabricated from GaAs, HgI2, CdTe and PbI2 can be found in this paper.
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The dielectric function of AlSb from 1.4 to 5.8 eV determined by spectroscopic ellipsometry
TL;DR: In this paper, the pseudodielectric function of AlSb in the 1.4-5.8 eV photon energy region with a spectroscopic ellipsometer was measured and a peak value of 24.6 at 4 eV was reached.
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Room temperature electrodeposition of aluminum antimonide compound semiconductor
TL;DR: In this paper, a pulsed potential electrodeposition method using a room temperature molten salt system (aluminum trichloride, AlCl 3 /1-methyl-3-ethylimidazolium chloride, EMIC) with an addition of SbCl 3 is discussed.
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Adhesion-free growth of AlSb bulk crystals in silica crucibles
TL;DR: In this article, the growth of aluminum antimonide (AlSb) (50mm diameter) in silica crucibles without any sticking problem has been demonstrated for the first time.
Patent
High resistivity aluminum antimonide radiation detector
TL;DR: Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
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Über neue halbleitende Verbindungen
TL;DR: In this article, a vorliegende Arbeit beschäftigt sich mit der Nachbildung der halbleitenden Elemente der vierten Hauptgruppe1 des periodischen Systems (Diamant, Si, Ge, graues Sn) durch bisher nicht als Halbleiter bekannte Verbindungen of Elementen of the dritten Hauptgroup (Al, Ga, In) with Elementen (P, As, Sb).
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ALSB as a High-Energy Photon Detector
TL;DR: In this paper, the possibility of using AlSb as a potential material for high-energy photon detection is examined by comparing the mobilities of the free carriers, the energy gap, the atomic number, and the carrier recombination time.
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Preparation and Properties of Aluminum Antimonide
TL;DR: In this article, the Czochralski technique was used to grow aluminum and antimony of high purity by zone refining, and the resistivity of as-grown P-type crystals can be decreased substantially by doping with carbon and increased by small quantities of Se and Te.
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