Journal ArticleDOI
On the Lifetime and Diffusion Constant of the Injected Carriers and the Emitter Efficiency of a Junction Transistor
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TLDR
In this article, the effective lifetime and apparent diffusion constant of the minority carriers in the base region of p-n-p alloy junction transistors of three different types have been determined.Abstract:
Values of the effective lifetime and of the apparent diffusion constant of the minority carriers in the base region of p-n-p alloy junction transistors of three different types have been determined. It is found that for a given temperature the effective lifetime passes through a maximum as the bias current is increased from a, low value. This is explained on the basis of the relative contributions to the lifetime of volume and surface recombination, The analysis also yields separately the values of the volume and the surface recombination lifetimes. Both the lifetimes are found to decrease with decreasing temperature. Further, the volume recombination lifetime is found to be appreciably smaller than those observed in n-typo germanium in bulk. The true values of the diffusion constants, as determined from the measured apparent values, arc found to obey an empirical relation that closely agrees with the relation for bulk germanium semi-conductor of the same type. A method of estimating the emitter ...read more
Citations
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Journal ArticleDOI
On the Determination of the Minority Carrier Lifetime in the Base Region of Transistors
M. B. Das,A. R. Boothroyd +1 more
TL;DR: In this paper, a method of determining the lifetime of minority earners in the base region of a uniform base transistor is presented, which involves measurement of the basewidth modulation parameters and the base transport time, taking into account effects of all extrinsic properties.
Journal ArticleDOI
Impurity concentrations in the regrown region of InGe alloyed junctions
TL;DR: In this paper, the development of an infra-red microscope for routine carrier density measurements on small semiconducting specimens is described, and a study has been made of regrown-alloyed regions of a size normally used in transistors.
Journal ArticleDOI
Determination of physical parameters and geometry of a junction transistor
TL;DR: In this article, the problem of determining the physical parameters and geometrical dimensions of a junction transistor from measurements of its equivalent circuit parameters was investigated, and simple manipulations of certain known relations in the theory of low-level transistor operation provided a method of determining to a reasonable degree of accuracy the values of lifetime, diffusion constant and mobility of injected carriers in the base region, the carrier concentrations in the emitter, base and collector regions, the base width and the effective junction areas.
Journal ArticleDOI
The Physical Interpretation of Measurements on Transistors
TL;DR: In this paper, the physical interpretation of measurements on transistors is discussed, with a focus on the transistors' properties and their relationship to the transistor's properties. But this work is limited to transistors.
Journal ArticleDOI
Analysis of the planar transistor at medium and high injection levels
TL;DR: In this article, the processes occurring in the base of a planar transistor of the p-n-p type at medium and high injection levels were investigated by an approximate method, taking into account explicity the space charge, the electric field, and scattering at moving carriers.
References
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Journal ArticleDOI
Statistics of the Recombinations of Holes and Electrons
William Shockley,W. T. Read +1 more
TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Journal ArticleDOI
Electrical Properties of Silicon Containing Arsenic and Boron
F. J. Morin,J. P. Maita +1 more
TL;DR: In this article, the authors measured the electrical conductivity and Hall effect of single-crystal silicon containing arsenic and boron and derived the intrinsic Hall mobility from Hall coefficient and conductivity.
Journal ArticleDOI
Recombination in Plastically Deformed Germanium
G. K. Wertheim,G. L. Pearson +1 more
Journal ArticleDOI
LI. Measurements on Alloy-Type Germanium. Transistors and their Relation to Theory
TL;DR: In this article, two methods for the accurate determination of the current amplification factor, ∞ of junction transistors are described and are applied to a germanium p-n-p alloy transistor.
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