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Optical absorption of ZnGa2Se4: Cr2+ single crystals

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TLDR
In this article, a single crystal of ZnGa 2 Se 4 : Cr 2+ was grown by the chemical transport reaction method and the optical absorption spectra of the single crystals were investigated in the temperature region 20-300 K. The broad band absorption peaks observed at 6317 and 12315 cm −1 in the impurity optical absorption spectrum are attributed to the electron transition 5 T 2 ( 5 D ) → 5 E (5 D ).
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This article is published in Solid State Communications.The article was published on 1990-04-01. It has received 4 citations till now. The article focuses on the topics: Absorption spectroscopy & Band gap.

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Magnetically ordered multinary semiconductors

TL;DR: In this paper, the correlation between crystal chemistry, electronic structure and magnetic state has been studied and a number of features such as low magnetic dimensionality, spin glass and cluster glass, helimagnetism are considered as a result of the predominant or disordered distribution of magnetic cations over the ordered crystal lattice.
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Current-voltage characteristics of ZnGa2Se4 compound polycrystals

TL;DR: In this paper, the current voltage characteristics of the In-ZnGa2Se4-In structure have been studied in the temperature range of 90 −335 K. The current transmission mechanism in electric fields weaker than 103 V/cm is caused by monopolar carrier injection.
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ZnGa2Se4, a nonlinear material with wide mid infrared transparency and good thermomechanical properties

TL;DR: ZnGa2Se4 (ZGSe) as discussed by the authors is a new compound that has a high thermal conductivity value in comparison with other selenides (2.9"W"m−1"K−1), a wide transparency from visible to beyond the band III of the mid IR (0.6
References
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Journal ArticleDOI

Temperature dependence of the energy gap in semiconductors

TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
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On the Absorption Spectra of Complex Ions II

TL;DR: In this paper, the authors solved the energy levels which are important in the absorption spectra of the normal complex ions, leaving the crystalline field strength as a parameter The values of B and C (Racah's parameters) there needed are determined from the observed spectras of free ions or in some cases by extrapolation The f -values of the transitions which connect energy levels calculated are estimated and compared with the observed intensities.
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Optical and electrical properties of ternary chalcogenides

TL;DR: In this paper, single crystals of various ternary chalcogenides of the formula AB 2 X 4 (where A = Zn, Cd, Hg; B = In, Ga; X = S, Se) have been grown from the vapour phase by means of a chemical transport reaction.
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Cr2+ excitation levels in ZnSe and ZnS

TL;DR: In this paper, a fitting of the eigenvalues of the Tanabe-Sugano matrices to the excitation bands supplies the crystal-field parameter Dq and the Racah parameters B and C. This fitting and the fact that one specific excitation band depends on pre-treatment suggest a slightly modified interpretation of the ZnS excitation spectra.
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FIR- und Ramanspektren von ternären Chalkogeniden des Galliums und Indiums mit Zink, Cadmium und Quecksilber

TL;DR: In this paper, the FIR-spectra of the compounds AB2X4 with A = Zn, Cd, Hg; B = Ga, In and X = S, Se and the Raman spectra of AGa2S4 have been recorded on powder samples.
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