Journal ArticleDOI
Optical properties of copper indium diselenide near the fundamental absorption edge
C. Rincón,C. Bellabarba +1 more
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In this paper, the binding energy of the exciton and ionization energy of acceptors and donors were determined to be 18, 54, and 26 (ifmmode\pm/pm\else\textpm\fi{}0.01 eV, respectively.Abstract:
In this work we report on an optical absorption study near the band gap of n-type ${\mathrm{CuInSe}}_{2}$ at 7 K. From the analysis of the results the energy gap is found to be 1.02\ifmmode\pm\else\textpm\fi{}0.01 eV. The binding energy of the exciton and the ionization energy of acceptors and donors are determined to be 18, 54, and 26 (\ifmmode\pm\else\textpm\fi{}5) meV, respectively. It is suggested that ${\mathrm{In}}_{\mathrm{Cu}}$ antisite donors and ${V}_{\mathrm{Cu}}$ acceptors are the predominant active intrinsic defects in ``In-rich'' ${\mathrm{CuInSe}}_{2}$.read more
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Defect physics of the CuInSe2 chalcopyrite semiconductor
C. Rincón,R. Márquez +1 more
TL;DR: In this paper, the activation energies of acceptor E A and donor levels E D in the chalcopyrite compound CuInSe 2 were calculated by using a simpler model based in the effective-mass theory for the case of single, double and triple point defect centers.
Journal ArticleDOI
Intrinsic point defects in CuInSe2and CuGaSe2as seen via screened-exchange hybrid density functional theory
Johan Pohl,Karsten Albe +1 more
TL;DR: In this paper, a self-contained study of the thermodynamic and electronic properties of intrinsic point defects in the solar absorber materials CuInSe2 and CuGaSe2 based on screened-exchange hybrid density functional theory is presented.
Journal ArticleDOI
Phase Diagram and Optical Energy Gaps for CuInyGa1-ySe2 Alloys
TL;DR: The T(y) phase diagram of the alloys CuInyGa1−ySe2, prepared by the chemical vapor deposition method, is obtained from X-ray diffraction and differential thermal analyses as mentioned in this paper.
Journal ArticleDOI
Concerning lattice defects and defect levels in CuInSe2 and the I‐III‐VI2 compounds
TL;DR: In this article, the defect levels and lattice defects in CuInSe2 and I•III•VI2 compounds were investigated and a hypothesis concerning the electrical compensation processes acting in the I'III'VI2 materials was proposed.
Journal ArticleDOI
Composition‐structure relationships for multisource evaporated CuGaSe2 thin films
TL;DR: In this paper, the compositional dependence of the order-disorder transition in polycrystalline CuGaSe2 thin films deposited by multisource evaporation was observed.
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