Journal ArticleDOI
Defect physics of the CuInSe2 chalcopyrite semiconductor
C. Rincón,R. Márquez +1 more
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TLDR
In this paper, the activation energies of acceptor E A and donor levels E D in the chalcopyrite compound CuInSe 2 were calculated by using a simpler model based in the effective-mass theory for the case of single, double and triple point defect centers.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1999-11-01. It has received 220 citations till now. The article focuses on the topics: Shallow donor.read more
Citations
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Thin-film Sb2Se3 photovoltaics with oriented one-dimensional ribbons and benign grain boundaries
Ying Zhou,Liang Wang,Shiyou Chen,Sikai Qin,Xinsheng Liu,Jie Chen,Ding-Jiang Xue,Miao Luo,Yuanzhi Cao,Yi-Bing Cheng,Edward H. Sargent,Jiang Tang +11 more
TL;DR: In this article, a simple, non-toxic and low-cost antimony selenide (Sb2Se3) material with an optimal solar bandgap of ∼1.1
Journal ArticleDOI
Point defect engineering in thin-film solar cells
TL;DR: In this paper, the evolution in the understanding of point defect behavior from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices, is reviewed.
Journal ArticleDOI
The electronic structure of chalcopyrites—bands, point defects and grain boundaries
TL;DR: In this paper, the authors summarize the progress made recently in understanding the electronic structure of chalcopyrite solar cells and summarize the results of optoelectronic defect spectroscopy.
Journal ArticleDOI
Wide Band Gap Chalcogenide Semiconductors.
Rachel Woods-Robinson,Rachel Woods-Robinson,Rachel Woods-Robinson,Yanbing Han,Yanbing Han,Hanyu Zhang,Tursun Ablekim,Imran Khan,Kristin A. Persson,Kristin A. Persson,Andriy Zakutayev +10 more
TL;DR: Applications-for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes-that employ wide band gap chalcogenides as either an active or passive layer are reviewed.
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Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu2SnSe3
TL;DR: X-ray powder diffraction by p-type Cu2SnSe3, prepared by the vertical Bridgman-Stockbarger technique, shows that this material crystallizes in a monoclinic structure, space group Cc, with unit cell parameters a=6.5936(1) A, b=12.1593(4)
References
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Journal ArticleDOI
Defect physics of the CuInSe 2 chalcopyrite semiconductor
TL;DR: In this article, the authors studied the defect physics in a chalcopyrite semiconductor and showed that it takes much less energy to form a Cu vacancy in the semiconductor than to form cation vacancies in II-VI compounds and that defect formation energies vary considerably both with the Fermi energy and with the chemical potential of the atomic species.
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Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions
TL;DR: In this article, a method to deduce energy distributions of defects in the band gap of a semiconductor by measuring the complex admittance of a junction is proposed, which consists of calculating the derivative of the junction capacitance with respect to the angular frequency of the signal corrected by a factor taking into account the band bending and the drop of the ac signal.
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High-efficiency cuinxga1-xse2 solar cells made from (inx,ga1-x)2se3 precursor films
Andrew M. Gabor,John R. Tuttle,David S. Albin,Miguel A. Contreras,Rommel Noufi,Allen M. Hermann +5 more
TL;DR: In this paper, Ga and Se were coevaporated to form precursor films of (Inx,Ga1−x)2Se3, which were then converted to CuInxGa 1−xSe2 by exposure to a flux of Cu and Se. The final films were smooth, with tightly packed grains, and had a graded Ga content as a function of film depth.
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Transport properties of CuInSe2
TL;DR: In this article, the electrical and thermal properties of CuInSe2 single crystals have been reviewed and in some cases, taking into account recently reported experimental values for the transport parameters, earlier results have been reexamined.