Journal ArticleDOI
Packages for ultra-high speed GaAs ICs
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TLDR
In this article, the requirements of ultra-high-speed GaAs ICs with up to 3GHz clock rates and 100 picoseconds rise and fall times were analyzed on the basis of propagation delay, stub lengths, cross-talk and power supply regulation.About:
This article is published in Microelectronics Journal.The article was published on 1985-03-01. It has received 15 citations till now. The article focuses on the topics: Quad Flat No-leads package & Integrated circuit packaging.read more
Citations
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Patent
Microwave integrated circuit passive element structure and method for reducing signal propagation losses
TL;DR: In this paper, a passive element (10) has an insulating layer (12) overlying a silicon substrate (14), and a metal layer (16) comprising a signal line (18) and a groundplane (20) is disposed overlying the groundplane.
Journal ArticleDOI
Ultra-reliable packaging for silicon-on-silicon WSI
TL;DR: In this article, the authors discuss the advantages of using silicon instead of conventional ceramic as the substrate materials and review the published status of this technology at other organizations, while conventional hybrid packages are successfully being used in early implementations to reduce size and weight.
Patent
Semiconductor device comprising a package
Akira Miyauchi,Hiroshi C,Osuzuki Nishimoto,Tadashi Aobadai Jutaku B Okiyama,Masahiro Sugimoto,Kitasagami Hiroo,Haruo Tamada,Shinji Emori +7 more
TL;DR: In this paper, a multilayer package with signal lines (212, 213, 121, 111; 213′) and ground surfaces (442, 452) formed at predetermined distances on two sides of the high-speed signal lines is considered.
Proceedings ArticleDOI
A new printed circuit board connector with flexible film leads
T. Kon,K. Yasuda,K. Nakano +2 more
TL;DR: In this paper, a printed circuit board (PCB) connector for fast pulse-signal transmission in the gigabits-per-second (Gbps) range has been developed.
Patent
High-frequency module
TL;DR: In this article, a high-frequency module having a dielectric resonator is described, where electrode openings formed on each of the main surfaces of the sheet are aligned so as to make the openings of the openings a Dielectric Resonator.
References
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Journal ArticleDOI
Properties of Microstrip Line on Si-SiO/sub 2/ System
H. Hasegawa,M. Furukawa,H. Yanai +2 more
TL;DR: In this article, a parallel-plate waveguide model for the microstrip line formed on the Si-SiO/sub 2/ system is analyzed theoretically and the results are compared with the experiment.
Journal ArticleDOI
A Josephson technology system level experiment
Mark B. Ketchen,B. J. C. van der Hoeven,J. Matisoo,J. H. Greiner,D. J. Herrell,Run-Han Wang,R.W. Guernsey,C.J. Anderson,P. C. Arnett,S. Bermon,Harry R. Bickford,A.A. Bright,P. Geldermans,T.R. Gheewala,K. R. Grebe,H. C. Jones,M. Klein,S. P. Klepner,Paul A. Moskowitz,M. Natan,S. Puroshothaman,J. Sokolowski,J.W. Stasiak,D.P. Walkman,A. J. Warnecke,C.T. Wu,T. Yogi +26 more
TL;DR: The first system level test vehicle in Josephson technology is described in this article, which consists of four circuit chips assembled on two cards in a high density, 3-dimensional, card-on-board package.
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