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Journal ArticleDOI

Performance characteristics of vertical-cavity semiconductor laser amplifiers

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TLDR
In this paper, the static and dynamic amplification of an external beam in a vertical-cavity surface emitting laser structure is demonstrated experimentally, achieving a high gain of 20 dB and a fast response of 60 ps, as well as a narrow amplification bandwidth.
Abstract
The static and dynamic amplification of an external beam in a vertical-cavity surface emitting laser structure is demonstrated experimentally. A high gain of 20 dB and a fast response of 60 ps, as well as a narrow amplification bandwidth, make the device very interesting for active optical filtering and switching.

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Citations
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Journal ArticleDOI

Long-wavelength vertical-cavity lasers and amplifiers

TL;DR: In this article, the authors report on advances in vertical-cavity surface-emitting lasers (VCSELs) and VCSOAs operating at 1.3 and 1.55 /spl mu/m.
Journal ArticleDOI

Design and analysis of vertical-cavity semiconductor optical amplifiers

TL;DR: In this paper, the authors present detailed, yet largely analytical, models for gain, optical bandwidth, and saturation power of vertical-cavity semiconductor optical amplifiers (VCSOAs) in reflection and transmission mode.
Journal ArticleDOI

Long wavelength vertical-cavity semiconductor optical amplifiers

TL;DR: In this article, a VCSOA operating in the 1.3-/spl mu/m wavelength region was presented, which was fabricated using wafer bonding; it was optically pumped and operated in reflection mode.
Journal ArticleDOI

Experimental demonstration of a multifunctional long-wavelength vertical-cavity laser amplifier-detector

TL;DR: The first experimental realization of a multifunctional long wavelength /spl lambda/=1.5/spl mu/m InGaAsP MQW vertical cavity laser amplifier-photodetector was reported in this article.
Journal ArticleDOI

Measurements and modeling of reflective bistability in 1.55-/spl mu/m laser diode amplifiers

TL;DR: In this paper, the dependence of reflective optical bistability on drive current, initial phase detuning, and injected optical pewter has been investigated for the first time in an uncoated 1.55-/spl mu/m amplifier.
References
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Journal ArticleDOI

Tunable extremely low threshold vertical-cavity laser diodes

TL;DR: In this paper, a three-terminal vertical-cavity laser diodes were fabricated by proton implantation and wet chemical etching, and the emission wavelength was matched to the spectral gain of the three active InGaAs quantum wells.
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Performance predictions for vertical-cavity semiconductor laser amplifiers

TL;DR: In this article, the vertical-cavity surface-emitting laser structures are studied theoretically to examine their potential for optical amplification, and a comparison between edge-and SEM amplifiers is made, showing where advantageous operation can be obtained, and suggests how the best use of the surface emitting amplifier performance can be made.
Journal ArticleDOI

Optimization of planar Be-doped InGaAs VCSEL's with two-sided output

TL;DR: In this paper, the dependence of output behavior on the composition, interface grading, and modulation doping of the Be-doped AlGaAs-GaAs Bragg reflector was studied.
Journal ArticleDOI

GaAlAs/GaAs active filter based on vertical cavity surface emitting laser

TL;DR: In this article, a novel active filter based on a vertical cavity surface emitting laser was demonstrated with a 3 dB filter bandwidth as narrow as 0.08 nm and a polarisation independent and ultralow power consumption device was expected with 2-D array configuration.
Journal ArticleDOI

Vertical microcavity optical amplifying switch

TL;DR: In this paper, the authors achieved a fast response of 20 ps and a gain of 2.5 dB point to an optical switch with a modulation width > 10 GHz, capable of handling 2 THz signals.
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