Journal ArticleDOI
Phase Equilibria in the Ga2O3In2O3 System
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TLDR
In this paper, X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°-1400°C were studied by Xing et al.Abstract:
Subsolidus phase relationships in the Ga2O3–In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°–1400°C. The solubility limit of In2O3 in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.X ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped β-Ga2O3 solid solution.read more
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Recent progress on the electronic structure, defect, and doping properties of Ga2O3
TL;DR: In this paper, the fundamental understanding of the semiconductor physics and chemistry of Ga2O3 in terms of electronic band structures, optical properties, and the chemistry of defects and impurity doping is provided.
Journal ArticleDOI
A new transparent conducting oxide in the ga2o3-in2o3-sno2 system
TL;DR: In this article, a new transparent conducting oxide (TCO), which can be expressed as Ga3−xIn5+xSn2O16; 0.2⩽x⩾1.6, has been identified.
Journal ArticleDOI
Group‐III Sesquioxides: Growth, Physical Properties and Devices
TL;DR: The group-III sesquioxides possess material properties that render them interesting for applications such as high-power rectifiers and transistors, solar-blind UV detectors and inter-sub-band infrared detectors as mentioned in this paper.
Journal ArticleDOI
β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy
TL;DR: By systematically changing growth parameters, the growth of β-(AlxGa 1−x)2O3/Ga 2O3 (010) heterostructures by plasma-assisted molecular beam epitaxy was optimized.
Journal ArticleDOI
beta-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
TL;DR: In this article, β-Al2xGa2-2xO3 alloy thin films were successfully grown on (100)-oriented β-Ga2O3 single-crystal substrates by plasma-assisted molecular beam epitaxy.
References
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Journal ArticleDOI
LAZY PULVERIX, a computer program, for calculating X‐ray and neutron diffraction powder patterns
K. Yvon,W. Jeitschko,E. Parthé +2 more
TL;DR: In this paper, a computer program has been written with the aim of calculating powder patterns without the use of crystallographic tables by deriving all symmetry information such as general equivalent positions from the Hermann-Mauguin space-group symbols.
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Crystal Structure of β‐Ga2O3
TL;DR: The crystal structure of β•Ga2O3 has been determined from single-crystal 3D x-ray diffraction data as mentioned in this paper, and the most probable space group to which the crystal belongs is C2h3-C2/m.
Journal ArticleDOI
Solid State Reactions Involving Oxides of Trivalent Cations.
TL;DR: The subsolidus phase equilibria relationships of 79 binary systems were drawn and the majority of A+3B+3O3 compounds have the perovskite structure.
Journal ArticleDOI
Transparent conducting thin films of GaInO3
Julia M. Phillips,J. Kwo,Gordon A. Thomas,Sue A. Carter,Robert J. Cava,S. Y. Hou,J. J. Krajewski,J. H. Marshall,W. F. Peck,D. H. Rapkine,R. B. van Dover +10 more
TL;DR: In this article, the authors used dc reactive sputtering in the on and off-axis geometries and pulsed laser deposition to grow films of pure GaInO3 as well as those partially substituted with Ge for Ga or Sn for In.