Journal ArticleDOI
Group‐III Sesquioxides: Growth, Physical Properties and Devices
TLDR
The group-III sesquioxides possess material properties that render them interesting for applications such as high-power rectifiers and transistors, solar-blind UV detectors and inter-sub-band infrared detectors as mentioned in this paper.Abstract:
The group-III sesquioxides possess material properties that render them interesting for applications such as high-power rectifiers and transistors, solar-blind UV detectors and inter-sub-band infrared detectors. Technology for growing large, single-crystalline bulk material and for wafer fabrication exists, enabling homoepitaxial growth of thin films with high crystalline quality. The bandgap can be tuned in an energy range from about 4 to 8 eV for the ternary alloys and allows growth of heterostructures with large band offset. Here, past results and recent investigations on the growth, the material properties, contact fabrication and the alloying of group-III sesquioxides are reviewed, and an overview on demonstrator devices is provided.read more
Citations
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A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors
Chao Xie,Xing-Tong Lu,Xiao-Wei Tong,Zhi-Xiang Zhang,Feng-Xia Liang,Lin Liang,Lin-Bao Luo,Yucheng Wu +7 more
TL;DR: In this article, a comprehensive review of the applications of inorganic ultrawide-bandgap (UWBG) semiconductors for solar-blind DUV light detection in the past several decades is presented.
Journal ArticleDOI
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
TL;DR: In this paper, the fundamental understanding of the semiconductor physics and chemistry of Ga2O3 in terms of electronic band structures, optical properties, and the chemistry of defects and impurity doping is provided.
Journal ArticleDOI
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
E. Chikoidze,Adel Fellous,Amador Pérez-Tomás,Guillaume Sauthier,Tamar Tchelidze,Cuong Ton-That,Tung Thanh Huynh,Matthew R. Phillips,Stephen A. O. Russell,Michael R. Jennings,Bruno Berini,François Jomard,Yves Dumont +12 more
TL;DR: In this paper, the authors present evidence of p-type conduction in the undoped WBG β-Ga2O3, which is consistent with findings from photoemission and cathodoluminescence spectroscopies.
Journal ArticleDOI
Radiation damage effects in Ga2O3 materials and devices
Jihyun Kim,Stephen J. Pearton,Chaker Fares,Jiancheng Yang,Fan Ren,Suhyun Kim,Alexander Y. Polyakov +6 more
TL;DR: In this article, the effect of radiation damage on Ga2O3 semiconductors is studied for low-earth orbit of satellites containing these types of devices, including proton, electron, X-ray, gamma ray, and neutron irradiation.
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