Journal ArticleDOI
Photoetching of Si(111)-(7 × 7) studied by STM
TLDR
In this paper, a partially chlorinated Si(111)-(7 × 7) surface was subjected to 193 nm excimer laser radiation, and the number of photoetched atoms per unit of illumination time was calculated.About:
This article is published in Surface Science.The article was published on 1997-04-10. It has received 37 citations till now. The article focuses on the topics: Fluence.read more
Citations
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Materials Modification by Electronic Excitation
A. M. Stoneham,Noriaki Itoh +1 more
TL;DR: Itoh et al. as discussed by the authors reviewed the field of materials modification by electronic excitation and identified ways to connect understanding to technological needs, like selective removal of material, controlled changes, altering the balance between process steps, and possibilities of quantum control.
Journal ArticleDOI
Materials modification by electronic excitation
Noriaki Itoh,A. M. Stoneham +1 more
TL;DR: In this article, it was shown that modification by electronic excitation can be achieved in a far wider range of materials, such as alkali halides, alkaline earth fluorides and fused quartz.
Journal ArticleDOI
Electron-induced “localized atomic reaction” (LAR): Chlorobenzene adsorbed on Si(111) 7×7
P. H. Lu,J. C. Polanyi,D. Rogers +2 more
TL;DR: In this article, electron impact imprints the self-assembled pattern of chlorobenzene (ClPh) on the surface as Cl-Si on the same area of the unit cell as ClPh(ad), but at adjacent atomic sites.
Journal ArticleDOI
Stereo-selective binding of chlorobenzene on Si(111)-7×7
Yong Cao,J. F. Deng,Guo Qin Xu +2 more
TL;DR: In this paper, the adsorption and binding of chlorobenzene (C6H5Cl) on clean and D-modified Si(111)-7×7 surfaces have been investigated using high resolution electron energy loss spectroscopy (HREELS) and thermal desorption (TDS).
Patent
Method of molecular-scale pattern imprinting at surfaces
John C. Polanyi,Duncan Rogers +1 more
TL;DR: In this paper, a method for mask-free molecular or atomic patterning of surfaces of reactive solids is disclosed, where molecules adsorb at surfaces in patterns, governed by the structure of the surface, the chemical nature of the adsorbate, and the coverage at the surface.
References
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Journal ArticleDOI
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
TL;DR: In this article, a low temperature thermal cleaning method for Si molecular beam epitaxy (MBE) is proposed, which consists of wet chemical treatment to eliminate carbon contaminants on Si substrates, thin oxide film formation to protect the clean Si surface from contamination during processing before MBE growth, and desorption of the thin oxide films under UHV.
Journal ArticleDOI
Desorption from Metal Surfaces by Low‐Energy Electrons
Dietrich Menzel,Robert Gomer +1 more
TL;DR: In this paper, the effect of low-energy electrons on hydrogen, oxygen, carbon monoxide, and barium adsorbed on tungsten has been investigated by a field-emission technique.
Journal ArticleDOI
Structure analysis of si(111)-7×7 reconstructed surface by transmission electron diffraction
TL;DR: In this article, the atomic structure of the 7 × 7 reconstructed Si(111) surface has been analyzed by ultra-high vacuum (UHV) transmission electron diffraction (TED).
Journal ArticleDOI
Surface electronic structure of Si(111)-(7x7) resolved in real space.
Journal ArticleDOI
Atomic scale desorption through electronic and vibrational excitation mechanisms
T. C. Shen,C. Wang,G. C. Abeln,J. R. Tucker,Joseph W. Lyding,Phaedon Avouris,Robert E. Walkup +6 more
TL;DR: The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon surfaces and a countable number of desorption sites can be created and the yield and cross section are obtained.
Related Papers (5)
Theory on laser sputtering by high-density valence-electron excitation of semiconductor surfaces
Laser-induced electronic bond breaking and desorption of adatoms on si(111)-(7 x 7)
Translational energy distribution of si atoms desorbed by laser-induced electronic bond breaking of adatoms on si(111)-(7 x 7)
J. Kanasaki,K. Iwata,K. Tanimura +2 more