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Proceedings ArticleDOI

Photorefractive multiple quantum well devices at 1064 nm

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TLDR
In this article, the authors report on the fabrication of photorefractive InGaAs-GaAs MQW and its performance at the wavelength of 1064 nm and its applications to proposed measurement systems.
Abstract
Summary form only given.Summary from only given. Photorefractive multiple quantum wells (MQWs) have been applied to the ultrasound detection, the depth-resolved image recognition through turbid media, and so on. The fabrication of photorefractive MQW devices at 1064 nm and its applications to proposed measurement systems are very attractive and interesting. Furthermore, the realization of these devices may create the new area of applications of photorefractive MQWs. Here, we report on the fabrication of photorefractive InGaAs-GaAs MQWs and its performance at the wavelength of 1064 nm.

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References
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Journal ArticleDOI

Photorefractive quantum wells: Transverse Franz-Keldysh geometry

TL;DR: In this paper, the photorefractive properties of semi-insulating AlGaAs-GaAs multiple quantum wells are described for the transverse Franz-Keldysh geometry with the electric field in the plane of the quantum wells.
Journal ArticleDOI

Laser-based ultrasound detection using photorefractive quantum wells

TL;DR: In this paper, a laser-based adaptive ultrasonic homodyne receiver using dynamic holography in AlGaAs/GaAs photorefractive multiple quantum wells was demonstrated.
Journal ArticleDOI

InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range

TL;DR: In this article, the operation of InxGa1−x As/GaAs 50 and 100-period multiple quantum well optical modulators at wavelengths ranging from 1.02 to 1.07 μm was reported.
Journal ArticleDOI

Holographic storage and high background imaging using photorefractive multiple quantum wells

TL;DR: In this paper, the authors report holographic, real-time, depth-resolved image acquisition, storage, and reconstruction in photorefractive GaAs/AlGaAs multiple quantum wells under high background radiation conditions.
Journal ArticleDOI

Novel reflectance modulator employing an InGaAs/AlGaAs strained‐layer superlattice Fabry–Perot cavity with unstrained InGaAs/InAlAs mirrors

TL;DR: In this paper, an optical reflectance modulator based on an asymmetric Fabry-Perot resonator designed to operate near 1.06 μm is presented. But the insertion loss at resonance is less than 2 db and a fractional modulation of over 60% has been achieved with a 4 V bias swing.
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