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Proceedings ArticleDOI

Physically based models of high power semiconductors including transient thermal behavior

Stefan Schroder, +1 more
- pp 114-117
TLDR
New device models are developed for power diodes and thyristor based devices, such as GTO, IGCT and MTO, based on semiconductor physics, which guarantees a wide range of validity in circuit simulation.
Abstract: 
Circuit simulation is a powerful tool for the design of high power converters, if suitable device models exist. Unfortunately, the commercially available circuit simulators do not have accurate models for high power semiconductors. Therefore, new device models are developed for power diodes and thyristor based devices, such as GTO, IGCT and MTO. These models are based on semiconductor physics, which guarantees a wide range of validity. Electrical and thermal behavior is implemented, which allows transient temperature simulation. The models are programmed in the C++ language and are implemented in the widely used circuit simulator PSpice using the Device Equation Options. Simulation results are compared with measurements.

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Citations
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Journal ArticleDOI

High-precision compact-thermal models

Mohamed Nabil Sabry
- 05 Dec 2005 - 
TL;DR: A systematic approach is proposed to build the compact model that gives a better control of errors, allowing the creation of compact models at any desired order of precision and gives access to new data concerning tangential gradients on the surface.
Journal ArticleDOI

Flexible Profile Compact Thermal Models for Practical Geometries

Mohamed Nabil Sabry
- 01 Sep 2007 - 
TL;DR: The new concept is based on the use of a flexible profile to account for different possible uses of the model and can deal with different patterns of heat generation encountered in MCM and stacked dies, and hence it is truly Boundary Conditions Independent (BCI).
Proceedings ArticleDOI

Compact Thermal Models: A Global Approach

S. Mohamed-Nabil, +1 more
TL;DR: A new approach is proposed that solves this dilemma by bridging the gap between compact and detailed models and gives reliable results covering all operating conditions including MCM and stacked dies.
Journal ArticleDOI

Full-Time Junction Temperature Extraction of IGCT Based on Electrothermal Model and TSEP Method for High-Power Applications

Xu Chaoqun, +7 more
- 01 Jan 2021 - 
TL;DR: A comprehensive method to extract full-time accurate junction temperature of IGCT for high-power application is proposed and results show the junction temperature profile over a long period.
Proceedings ArticleDOI

A quasi 2-dimensional model for thyristor based devices

D. Detjen, +3 more
TL;DR: In this paper, a model for GTO devices as well as new thyristor based devices suited for circuit simulation is proposed, which is based on the charge control method and considers significant 2-dimensional geometric effects inside the GTO-cell during switching operation.
References
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Journal ArticleDOI

Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

J.M. Dorkel, +3 more
- 01 Sep 1981 - 
TL;DR: In this article, a review of different publications on the carrier mobilities in silicon is presented, and an approximated calculation procedure is proposed which permits a quick and accurate evaluation of these mobilities over a large range of temperatures, doping concentrations and injection levels.
Journal ArticleDOI

A unified diode model for circuit simulation

H.A. Mantooth, +2 more
TL;DR: In this paper, a new commercially available diode model is described, which is capable of simulating the widest range of diode technologies of any presently available, and the emphasis of this paper is on describing the model's extensive features and flexibility in the different domains of operation.
Proceedings ArticleDOI

A systematic approach to modeling of power semiconductor devices based on charge control principles

C.L. Ma, +4 more
TL;DR: In this paper, the charge control approach to modeling is extended to power devices by converting device equations to charge modules, which can then be used to assemble device models, and the resulting models are represented by relatively simple functions which are valid over a wide range of operation.
Proceedings ArticleDOI

A new and accurate circuit-modelling approach for the power-diode

T. Vogler, +1 more
TL;DR: In this paper, a class of bipolar power semiconductor models for time-saving large-topology circuit simulation is presented, where the ambipolar diffusion equation is solved numerically including local effects such as carrier-carrier scattering and Auger recombination processes.
Proceedings ArticleDOI

A physics-based GTO model for circuit simulation

C.L. Ma, +2 more
TL;DR: In this article, the lumped-charge modeling technique is used to build a compact GTO model for power electronic convertor simulation, which consists of simplified fundamental semiconductor equations and provides most of the important characteristics of a GTO device under static and dynamic conditions.