Journal ArticleDOI
Physics of Semiconductor Devices. S. M. Sze. Interscience (Wiley), New York, 1969. xvi + 814 pp., illus. $19.95
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This article is published in Science.The article was published on 1969-11-28. It has received 65 citations till now.read more
Citations
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Journal ArticleDOI
Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors
Lei Liao,Zhou Zhang,Bin Yan,Zhe Zheng,Qiaoliang Bao,Tom Wu,Chang Ming Li,Zexiang Shen,Jixuan Zhang,Hao Gong,Jinchai Li,Ting Yu +11 more
TL;DR: Large-scale p-type CuO nanowire thin-film transistors are fabricated and they effectively demonstrate their enhanced performance, which makes it a promising candidate for a poisonous gas sensing nanodevice.
Journal ArticleDOI
Electrostatic force microscopy: principles and some applications to semiconductors
TL;DR: In this article, the current state of the art of electrostatic force microscopy (EFM) is presented and the principles of EFM operation and the interpretation of the obtained local voltage and capacitance data are discussed.
Journal ArticleDOI
Voltage gated ion and molecule transport in engineered nanochannels: theory, fabrication and applications
TL;DR: This review will focus on the voltage gated ionic and molecular transport in engineered gated nanochannels, and an overview of the transport theory is presented, which involves biological and chemical analysis, and energy conversion.
Journal ArticleDOI
Simulation of the electric response of DNA translocation through a semiconductor nanopore?capacitor
Maria E. Gracheva,Anlin Xiong,Aleksei Aksimentiev,Klaus Schulten,Gregory Timp,Jean-Pierre Leburton +5 more
TL;DR: In this article, a multi-scale/multi-material computational model for simulation of the electric signal detected on the electrodes of a metaloxide-semiconductor (MOS) capacitor forming a nanoscale artificial membrane, and containing a nanopore with translocating DNA, is presented.
Journal ArticleDOI
Electron tunnelling in self-assembled monolayers
TL;DR: In this paper, a review on the mechanisms and characterization methods of electronic transport through self-assembled monolayers (SAMs) is presented using SAMs of alkanethiols in a nanometre scale device structure, unambiguously demonstrated as the main intrinsic conduction mechanism for defect-free large bandgap SAMs, exhibiting well-known temperature and length dependences.
References
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Journal ArticleDOI
Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors
Lei Liao,Zhou Zhang,Bin Yan,Zhe Zheng,Qiaoliang Bao,Tom Wu,Chang Ming Li,Zexiang Shen,Jixuan Zhang,Hao Gong,Jinchai Li,Ting Yu +11 more
TL;DR: Large-scale p-type CuO nanowire thin-film transistors are fabricated and they effectively demonstrate their enhanced performance, which makes it a promising candidate for a poisonous gas sensing nanodevice.
Journal ArticleDOI
Electrostatic force microscopy: principles and some applications to semiconductors
TL;DR: In this article, the current state of the art of electrostatic force microscopy (EFM) is presented and the principles of EFM operation and the interpretation of the obtained local voltage and capacitance data are discussed.
Journal ArticleDOI
Voltage gated ion and molecule transport in engineered nanochannels: theory, fabrication and applications
TL;DR: This review will focus on the voltage gated ionic and molecular transport in engineered gated nanochannels, and an overview of the transport theory is presented, which involves biological and chemical analysis, and energy conversion.
Journal ArticleDOI
Simulation of the electric response of DNA translocation through a semiconductor nanopore?capacitor
Maria E. Gracheva,Anlin Xiong,Aleksei Aksimentiev,Klaus Schulten,Gregory Timp,Jean-Pierre Leburton +5 more
TL;DR: In this article, a multi-scale/multi-material computational model for simulation of the electric signal detected on the electrodes of a metaloxide-semiconductor (MOS) capacitor forming a nanoscale artificial membrane, and containing a nanopore with translocating DNA, is presented.
Journal ArticleDOI
Electron tunnelling in self-assembled monolayers
TL;DR: In this paper, a review on the mechanisms and characterization methods of electronic transport through self-assembled monolayers (SAMs) is presented using SAMs of alkanethiols in a nanometre scale device structure, unambiguously demonstrated as the main intrinsic conduction mechanism for defect-free large bandgap SAMs, exhibiting well-known temperature and length dependences.