Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface
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In this article, a plasma assisted polishing (PAP) was used to flatten a GaN surface with a Sq roughness of 0.1 nm using a CeO2 grindstone for surface flattening.About:
This article is published in CIRP Annals.The article was published on 2015-01-01 and is currently open access. It has received 40 citations till now. The article focuses on the topics: Chemical-mechanical planarization & Polishing.read more
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Phase transition and plastic deformation mechanisms induced by self-rotating grinding of GaN single crystals
TL;DR: In this paper , the deformation and removal mechanisms of gallium nitride (GaN) single crystals involved in the ultra-precision machining process are not well revealed and few investigations on the grinding of GaN crystals have been reported.
Journal ArticleDOI
Phase transition and plastic deformation mechanisms induced by self-rotating grinding of GaN single crystals
TL;DR: In this paper, the deformation and removal mechanisms of gallium nitride (GaN) single crystals involved in the ultra-precision machining process are not well revealed and few investigations on the grinding of GaN crystals have been reported.
Journal ArticleDOI
Molecular dynamics simulation of laser assisted grinding of GaN crystals
TL;DR: In this article , the effects of the laser power density on grinding force, stress distribution, material damage mechanism, subsurface damage depth, and abrasive wear were systematically studied, and the results demonstrated that dislocations, stacking faults, hexagonal-to-cubic phase transition, and amorphous transition were generated during both traditional grinding and laser assisted grinding processes.
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Damage-free finishing of CVD-SiC by a combination of dry plasma etching and plasma-assisted polishing
TL;DR: In this paper, the properties of CVD-SiC substrates, including their surface morphology, composition and crystalline orientation, were investigated using diamond abrasives and conventional chemical mechanical polishing (CMP) using CeO 2 slurry.
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Anisotropy dependence of material removal and deformation mechanisms during nanoscratch of gallium nitride single crystals on (0001) plane
TL;DR: In this paper, the anisotropy dependence of material removal and deformation behaviors was investigated systematically, and the results showed that crack-free plastic deformation of GaN crystals could be acquired along different zone axes, which was dominated by phase transition, polycrystalline nanocrystals, amorphous transition, as well as close-to-atomic scale damages including stacking faults, dislocations and lattice distortions.
References
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An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments
Warren C. Oliver,George M. Pharr +1 more
TL;DR: In this paper, the authors used a Berkovich indenter to determine hardness and elastic modulus from indentation load-displacement data, and showed that the curve of the curve is not linear, even in the initial stages of the unloading process.
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Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
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A Fundamental Equation of State for Heavy Water
TL;DR: In this paper, a fundamental equation of state has been formulated for heavy water in the form Ψ = Ψ(p,T) in which Ω = Helmholtz free energyp = density T = thermodynamic temperature.
Book
The NBS tables of chemical thermodynamic properties : selected values for inorganic and C1 and C2 organic substances in SI units
TL;DR: In this paper, a new collective edition of the "Selected values of Chemical Thermodynamic Properties," which was issued serially as National Bureau of Standards Technical Notes 270-1 (1965) to 270-8 (1981), was published.
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Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface
TL;DR: In this article, a novel polishing technique combined with the irradiation of atmospheric pressure plasma was proposed for the finishing of a silicon carbide material, and a scratch-free atomically flat surface with an rms roughness of 0.1nm level was obtained.