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Journal ArticleDOI

Preparation and characterization of the pseudobinary system Cu1−xAgxInTe2

S. Kasiviswanathan, +2 more
- 01 Sep 1986 - 
- Vol. 5, Iss: 9, pp 912-914
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This article is published in Journal of Materials Science Letters.The article was published on 1986-09-01. It has received 6 citations till now. The article focuses on the topics: Characterization (materials science).

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Citations
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High-temperature thermoelectric properties of non-stoichiometric Ag1 − xInTe2 with chalcopyrite structure

TL;DR: In this article, the authors examined the high-temperature TE properties of AgInTe 2 with the composition of Ag 1−− x InTe 2 ( x ǫ = 0, 0.03, and 0.05).
Journal ArticleDOI

Near-infrared emitting AgInTe2 and Zn-Ag-In-Te colloidal nanocrystals

TL;DR: Evolution of the Ag:In:Te ratio shows progressive incorporation of In3+ in Ag2Te, leading to the formation of orthorhombic AgInTe2, and when zinc is added to the synthesis, the photoluminescence quantum yield reaches 3.4%.
Journal ArticleDOI

Silver vacancy concentration engineering leading to the ultralow lattice thermal conductivity and improved thermoelectric performance of Ag 1-x InTe 2

TL;DR: The results attained in this work suggest that the engineering of the silver vacancy (VAg) concentration is still an effective way to manipulate the thermoelectric performance of AgInTe2, realized by the increased point defects and modified crystal structure distortion as the VAg concentration increases.
Journal ArticleDOI

Relationship between electrical properties and electronic structure of the thermoelectric Ag–In–Te system with chalcopyrite structure and its related defect-containing structure

TL;DR: In this paper, the electrical properties and electronic structure of defect-containing chalcopyrite AgIn5Te8 and AgInTe2 were investigated, and it was shown that p-type AgIn 5Te8 had worse electrical properties than AgIn Te2, which is probably attributed to its lower mobility due to defects at its cation sites.
References
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Journal ArticleDOI

Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications

TL;DR: In this article, Shay and Wernick predict that the Chalcopyrite crystal licenses collective consumer market, apart from the right of ownership and other property rights, energy sublevel excessively insures image, says G. Almond.
Book

Bonds and Bands in Semiconductors

TL;DR: This article has tried to show how this realm between physics and chemistry can be treated accurately and realistically within the framework of theory.
Journal ArticleDOI

Crystal Structure of Luminescent ZnSiP2

TL;DR: ZnSiP2 as discussed by the authors is a chalcopyrite crystal with a tetrahedrally surrounded by 4 P atoms at 2.049 A. The final agreement factor, based on a combination of 197 symmetryindependent reflections from the first crystal and 176 from the second, is 0.001 A.
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Solid solution formation in the systems CuMIIIX2-AgMIIIX2 where MIII=Al, Ga, In and X2=S, Se

TL;DR: In this article, the limits of solid solubility are explained in terms of the c/a ratio, and the internal atomic coordinate u. The lattice constant a is a linear function of composition, while c bows upwards.
Journal ArticleDOI

Electronegativity and tetragonal distortions in AIIBIVCV2 semiconductors

TL;DR: In this paper, the tetragonal distortions 2-c/a and dielectrically defined electronegativities based on polarizabilities of A n B 8-n compounds were investigated.
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