Patent
Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
Minh Van Ngo,Sunil D. Mehta +1 more
TLDR
In this paper, a tungsten damascene local interconnect structure includes a silicon nitride etch stop layer which is formed using Plasma Enhanced Chemical Vapor Deposition (PECVD) at a temperature of at least 480°C.Abstract:
A semiconductor memory device such as a flash Electrically Erasable Programmable Read-Only Memory (Flash EEPROM) includes a floating gate with high data retention. A tungsten damascene local interconnect structure includes a silicon nitride etch stop layer which is formed using Plasma Enhanced Chemical Vapor Deposition (PECVD) at a temperature of at least 480° C. such that the etch stop layer has a very low concentration of hydrogen ions. The minimization of hydrogen ions, which constitute mobile positive charge carriers, in the etch stop layer, minimizes recombination of the hydrogen ions with electrons on the floating gate, and thereby maximizes data retention of the device.read more
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Patent
Formation of a tantalum-nitride layer
TL;DR: In this paper, a method of forming a material on a substrate is described, in which a metal-containing layer is subsequently deposited on the tantalum nitride layer, which is then reduced by a plasma annealing process.
Patent
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TL;DR: In this article, the use of vertical floating gate memory cells and select gates in NOR or NAND high-density memory architectures is described, which allow for improved high density memory devices or arrays with integral select gates that can take advantage of the feature sizes semiconductor fabrication processes are generally capable of and allow for appropriate device sizing for operational considerations.
References
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Patent
Inlet manifold and methods for increasing gas dissociation and for pecvd of dielectric films
TL;DR: An inlet manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow, which increases the dissociation gases such as nitrogen and thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia as discussed by the authors.
Patent
Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources
TL;DR: In this paper, a low temperature chemical vapor deposition process comprising heating a substrate upon which deposition is desired to a temperature of from about 350° C. to about 700° C is described.
Patent
Method of forming contacts to a semiconductor device
San-Mei Ku,Katleen Alice Perry +1 more
TL;DR: In this paper, a method of forming semiconductor device contacts includes the steps of: providing a semiconductor substrate (26) having at least two features e.g. a polysilicon land (36), another polysilico land (48), and a substrate(26), thereon whereat it is desired to make electrical connections; forming a layer (54) of etch stop material having a first etch characteristic over each of the features; forming an etchant selective to the layer of dielectric material so as to substantially stop on the layer, the at least
Patent
Self-aligned contact process in semiconductor fabrication
TL;DR: The encapsulation of gate stacks of a semiconductor device in an oxide insulative layer and in a silicon nitride etch-stop layer allows the formation of a contact filling for connection to underlying diffusion regions without risk of accidental diffusion contact to gate shorts created by the contact filling as discussed by the authors.