Journal ArticleDOI
Pulsed Irradiation of Optimized, MBE Grown, AlGaAs/GaAs Radiation Hardened Photodiodes
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TLDR
In this paper, the effects of neutron irradiation of AlGaAs/GaAs double hetero-junction photodiodes and special, small active volume, PIN silicon photodors were reported.Abstract:
We report here new results including the effects of neutron irradiation of AlGaAs/GaAs double hetero-junction photodiodes and special, small active volume, PIN silicon photodiodes. Results from high energy electron irradiations are also presented. Finally we report on improvements in processing and growth of these radiation hardened, AlGaAs/GaAs, double heterojunction, photodiodes. Neutron irradiation studies have shown that the double heterojunction, AlGaAs/GaAs photodiodes degrade only slightly after exposure to 3.6 × 1015 n/cm2. The special "rad-hard" silicon PIN photodiodes showed considerably greater degradation in both optical responsivity and leakage current characteristics after exposure to neutron fluences of 1.0 × 1015 n/cm2. Measurements of ionizing-radiation induced photocurrent during exposures to pulsed electron beams and pulsed x-rays show that the AlGaAs/GaAs structures generate only a fraction (0.03 to 0.1) of the current generated by the small active volume, radhard, silicon photodiodes. Optimization of the device growth and fabrication processes have resulted in significantly better electrical characteristics while maintaining good optical properties. The irradiation test results reported here expand our knowledge of the radiation hardness of these devices to include other types of irradiation threats beyond previously published work.read more
Citations
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Journal ArticleDOI
Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors
TL;DR: AlGaAs/GaAs heterojunction bipolar transistors irradiated with 10/sup 15/ neutrons/cm/sup 2/ demonstrated superior performance to silicon bipolar transistor.
Proceedings ArticleDOI
Radiation Effects On Light Sources And Detectors
TL;DR: In this paper, the authors review the work on radiation effects on sources and detectors for such optoelectronic systems, and show that the principal problem is permanent damage-induced light output degradation, while for detectors it is ionizing radiation-induced photocurrents.
Journal ArticleDOI
Development of Radiation Hard ${\rm N}^{+}$ -on-P Silicon Microstrip Sensors for Super LHC
K. Hara,K. Inoue,A. Mochizuki,T. Meguro,H. Hatano,Yoichi Ikegami,T. Kohriki,Susumu Terada,Yoshinobu Unno,Kazuhisa Yamamura,S. Kamata +10 more
TL;DR: In this article, a non-inverting n+-on-p sensor was used at the Super LHC experiment to measure the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
Journal ArticleDOI
Optoelectronic Data Link Designed for Applications in a Radiation Environment
TL;DR: In this article, the authors report on component studies on a 10 m long, optoelectronic data transmission link designed for operation in a radiation environment and show good immunity to neutron fluence levels of approximately 2 × 1014 n/cm2 and gamma radiation levels of 107 rad (Si).
Proceedings ArticleDOI
Radiation effects considerations for the application of photonics in space systems
TL;DR: The RHA issues associated with the infusion of photonics into space systems, both military and civilian are discussed, and similar problems that have been encountered in the more traditional area of RHA for Si microcircuits are contrasted.
References
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Journal ArticleDOI
Permanent Damage Effects in Si and AlGaAs/GaAs Photodiodes
TL;DR: In this paper, permanent damage effects in photodiodes due to total dose exposures of 108 rad (Si) ionizing-radiation from a Co60 source were investigated and the degradation of optical quantum efficiency and increases in photodiode leakage current in Si PIN structures with specially designed and fabricated, double heterostructure AlGaAs/GaAs photodes.
Journal ArticleDOI
Transient Effects of Ionizing Radiation in Photodiodes
TL;DR: In this article, the amplitude of unwanted, noise current induced during exposure to ionizing-radiation environments, without significantly reducing the desired photodiode signal current, has been investigated for the optical wavelength range from.7?m to 1.4?m.
Journal ArticleDOI
Computer Modeling and Radiation Testing of AlGaAs Photodiode Structures
TL;DR: In this article, a detailed one-dimensional computer model was used to identify the device characteristics which determine the undesirable current induced in various AlGaAs photodiode structures by ionizing radiation.