Journal ArticleDOI
Pulsed laser annealing of selenium implanted InP
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TLDR
In this article, the authors used a Q-switched ruby laser in the energy range 0.2 to 2.2 J cm-2 to study 200 keV selenium ions implanted into InP.Abstract:
Rutherford back-scattering, Hall effect and Nomarski interference microscopy have been used to study 200 keV selenium ions implanted into InP in the dose range 1*1014 to 1*1015 cm-2. Samples were irradiated with single pulses from a Q-switched ruby laser in the energy range 0.2 to 2.2 J cm-2. It was found that capless laser irradiation does not allow complex recrystallisation of damaged InP, and an energy density of 0.3 J cm-2 causes surface decomposition, thus producing indium-rich surface layers. To ensure that the measured electrical properties were due to the implanted atoms alone it was found necessary to thermally anneal samples at 4000DC for 5 min after the laser irradiation. The activity was 26% and the mobility of 300 cm2 V-1 s-1 for a dose of 1*1015 Se+ cm-2 irradiated at 0.5 J cm-2.read more
Citations
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Journal ArticleDOI
Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp
TL;DR: In this article, a 100kW water-walled dc argon arc lamp was used for the first time to post anneal ion-implanted InP samples, which achieved an average mobility of 1415 cm2/Vs and an activation of ∼63%.
Journal ArticleDOI
Transient annealing of indium phosphide
TL;DR: In this article, a rapid annealing procedure for the short-term treatment of implanted ion species is described, which from data obtained on InP is seen to result in high activation efficiencies and mobilities ∼ 85 percent and 2600 cm2/V.s, respectively.
Journal ArticleDOI
Annealing of selenium implanted indium phosphide using a graphite strip heater
S S Gill,B.J. Sealy +1 more
TL;DR: In this paper, both isothermal and isochronal anneals were performed on doses of 1×1013 to 1 ×1015 cm−2 of 200-keV selenium ions implanted into indium phosphide (InP) at room temperature.
Journal ArticleDOI
The role of defects in the diffusion and activation of impurities in ion implanted semiconductors
C. W. Farley,Ben G. Streetman +1 more
TL;DR: In this paper, the role of defects in redistribution during the annealing of ion-implanted semiconductors is discussed and a number of implantation methods have been proposed to avoid these defects.
Journal ArticleDOI
Low loss 4He+ implanted LiNbO3 waveguide produced by transient annealing
TL;DR: In this paper, the authors used transient thermal annealing to process planar optical waveguides in LiNbO3 using 4He+ implantation and showed that with this short time anneal, the quality of the waveguide improved significantly giving an attenuation of 0.2 dB/cm at 0.633 μm.
References
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Journal ArticleDOI
Laser annealing of capped and uncapped GaAs
TL;DR: In this paper, anon-implanted GaAs samples have been annealed using a Q-switched ruby laser, and both Si3N4 capped and uncapped samples decomposed and gallium precipitates were formed at the surface.
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Pulse electron annealing of ion-implanted InP
TL;DR: Pulsed electron beam annealing has been used to activate high-dose silicon implants in InP as mentioned in this paper, achieving peak concentrations ≳1019 cm−3 without any appreciable carrier freezeout on cooling to 78 °K.
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Annealing of Si3N4-capped ion-implanted InP
TL;DR: In this article, CVD-Si3N4 layers were used to encapsulate Se+-implanted InP during annealing in the range 550°C to 730°C.
Journal ArticleDOI
InP surface conducting films from electron-pulse annealing
TL;DR: In this paper, the conduction is confined to within ∼500 A of the surface and is annealable thermally ∼400 °C, and the electron microscopy and Rutherford backscattering show that electron beam annealing leads to a phosphorus loss at the surface.
Journal ArticleDOI
Rutherford back-scattering and ellipsometry of selenium implanted InP
S S Gill,B.J. Sealy,K G Stephens +2 more
TL;DR: In this paper, a good correlation has been found between disorder, measured by Rutherford back-scattering and the extinction coefficient obtained from ellipsometry measurements for 200 keV selenium ions implanted up to a dose of 1*1015 cm-2 at room temperature.