Journal ArticleDOI
Quantum dot infrared photodetectors
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In this paper, the authors discuss key issues related to quantum dot infrared photodetectors, including the normal incidence response, the dark current, and the responsivity and detectivity.Abstract:
We discuss key issues related to quantum dot infrared photodetectors. These are the normal incidence response, the dark current, and the responsivity and detectivity. It is argued that the present devices have not fully demonstrated the potential advantages. The dominant infrared response in devices so far is polarized in the growth direction. The observed dark currents are several orders of magnitude higher than those for quantum well photodetectors; while ideally they should be lower. The areas that need improvements are pointed out.read more
Citations
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Journal ArticleDOI
The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
Antonio Luque,Antonio Martí +1 more
TL;DR: The intermediate band (IB) solar cell has been proposed to increase the current of solar cells while at the same time preserving the output voltage in order to produce an efficiency that ideally is above the limit established by Shockley and Queisser in 1961.
Journal ArticleDOI
Review of current progress in quantum dot infrared photodetectors
TL;DR: In this article, the authors compare the performance of QDIPs with QWIPs in terms of noise equivalent temperature difference and discuss the reasons for the performance gap and the key scientific and technological challenges that need to be addressed to achieve the full potential of quantum dot infrared photodetectors.
Journal ArticleDOI
Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.
Jiang Wu,Dali Shao,Vitaliy G. Dorogan,Alvason Zhenhua Li,Shibin Li,Eric A. DeCuir,M. Omar Manasreh,Zhiming Wang,Yuriy I. Mazur,Gregory J. Salamo +9 more
TL;DR: Normal incident photodetection at mid infrared spectral region is achieved using the intersublevel transitions from strain-free GaAs quantum dot pairs in Al(0.3)Ga( 0.7)As matrix.
Journal ArticleDOI
Quantum-dot infrared photodetectors: a review
TL;DR: The state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs quantum dot infrared photodetectors (QDIPs) as mentioned in this paper.
Journal ArticleDOI
Quantum dot nanostructures and molecular beam epitaxy
TL;DR: In this paper, the basic features of the molecular beam epitaxy growth of quantum dots are discussed and an overview of quantum dot devices is given, with particular attention paid to the quantum dot laser.
References
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Journal ArticleDOI
Normal-incidence intersubband (in, ga)as/gaas quantum dot infrared photodetectors
TL;DR: In this article, Wu et al. proposed a method to solve the problem of quantum teleportation in the context of Chinese Academia, Instemicond, Beijing 100083, Peoples R China.
Journal ArticleDOI
Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
TL;DR: This work uses a simple carrier capture model consisting of two capture configurations to explain the bottleneck signal and offers arguments to rule out other possible sources of the signal.
Journal ArticleDOI
Quantum dot infrared photodetectors
TL;DR: In this paper, the authors used state-filling photoluminescence experiments to probe the zero-dimensional states and revealed four atomic-like shells (s,p,d,f) with an excitonic inter-sublevel energy spacing which was adjusted to ∼60 meV.
Journal ArticleDOI
Far-infrared photoconductivity in self-organized InAs quantum dots
TL;DR: In this paper, the authors reported far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy using a Fourier transform infrared spectrometer.
Journal ArticleDOI
Mid-infrared photoconductivity in InAs quantum dots
TL;DR: In this article, a self-assembled InAs quantum dot is reported to have normal incidence photoconductivity at a range of wavelengths in the mid-infrared and is attributed to single carrier transitions out of the dots.