Journal ArticleDOI
Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.
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This article is published in Physical Review Letters.The article was published on 1990-07-23. It has received 233 citations till now. The article focuses on the topics: Scanning tunneling spectroscopy & Scanning tunneling microscope.read more
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Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds.
TL;DR: The purpose of this article is to provide an overview of the surface structures of the clean surfaces of tetrahedrally coordinated semiconductors within the context of identifying the main features of their structural chemistry.
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The evolution of surface layers formed during chalcopyrite leaching
TL;DR: Chalcopyrite (CuFeS2) leaching in perchloric acid (HClO4) at an initial pH of one and a temperature of 85°C has been examined in this paper.
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Scanning tunneling microscopy of semiconductor surfaces
Joel A. Kubby,John J. Boland +1 more
TL;DR: In this article, a comprehensive review of the structures of the clean, low-index surfaces of elemental and compound semiconductors is presented using the general physical principles that determine them.
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Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires
Daniel Rudolph,Simon Hertenberger,Stefanie Bolte,Stefanie Bolte,Watcharapong Paosangthong,Danĉe Spirkoska,Markus Döblinger,Max Bichler,Jonathan J. Finley,Gerhard Abstreiter,Gregor Koblmüller +10 more
TL;DR: The results show that the growth mode transition is caused by an abrupt change from As- to Ga-limited conditions at the (111)-oriented NW growth front, allowing precise tuning of the dominant growth mode.
Journal ArticleDOI
Theory of semiconductor surface reconstruction
TL;DR: In this paper, a review of semiconductor surface reconstruction is presented for clean cleaved, clean epitaxially grown, overlayer covered, surfactant mediated, and defect induced reconstructed semiconductor surfaces.