Patent
Semiconductor device with temperature sensor
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TLDR
In this article, a temperature sensor has a MOS transistor and a bipolar transistor and is configured such that the substhreshold current intensity of the MOS transistors is proportional to the temperature to be measured.Abstract:
A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in the semiconductor body. The temperature sensor has a MOS transistor and a bipolar transistor. The MOS transistor is integrated into the semiconductor body nd configured such that the substhreshold current intensity of the MOS transistor is proportional to the temperature to be measured. The subthreshold current of the MOS transistor is amplified by the bipolar transistor.read more
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References
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Patent
Method for producing semiconductor temperature sensor
TL;DR: In this article, a method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP transistors is formed at the same time, and connecting them in a Darlington connection.
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Device and method for detecting a reliability of integrated semiconductor components at high temperatures
TL;DR: In this paper, the authors proposed a method for detecting the reliability of integrated semiconductor components using a temperature sensor with at least a portion of a parasitic functional element of the semiconductor component.
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Two-chip power IC having an improved short-circuit response
TL;DR: In this article, a two-chip power IC was proposed, in which a sensor chip having a sensor is mounted on a switch chip with a switch, and the sensor is electrically connected to the switch in order to turn the switch off when a temperature detected by the sensor exceeds a threshold value which can be preset.
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Power switching semiconductor device
TL;DR: In this paper, a bipolar transistor with an integral MOSFET for driving its base, so that a small signal applied to the gate drives the bipolar transistor into saturation, is described.