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Semiconductor-like carrier conduction and its field-effect mobility in metal-doped C60 thin films
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TLDR
In this paper, conductivity and its temperature dependence, conduction type, and field-effect mobility in metal-doped C60 thin films are investigated together with those of undoped films.Abstract:
Conductivity and its temperature dependence, conduction type, and field-effect mobility in metal (In or Sb)-doped C60 thin films are investigated together with those of undoped films. All electrical measurements have been conducted without exposure to air after deposition, in order to minimize the degradation of films due to incorporation of oxygen. For films with both dopants, (1) the conductivity is several orders of magnitude higher than that of undoped films, (2) the conductivity follows a semiconductor-like temperature dependence with the activation energy of 0.10-0.17 eV, which is much lower than that of the undoped films, 0.51 eV, (3) the conduction is n-type, and (4) the field-effect mobility is 0.03-0.04cm2/Vs. Enhancement of conductivity in metal-doped C60 films is attributed to the increase of both carrier concentration and mobility.read more
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Gilles Horowitz,F. Kouki,Peter Spearman,Denis Fichou,Claude Nogues,Xavier Pan,Francis Garnier +6 more
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Molecular Design and Synthetic Approaches to Electron-Transporting Organic Transistor Semiconductors†
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A universal relation between conductivity and field-effect mobility in doped amorphous organic semiconductors
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References
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Journal ArticleDOI
Resistivity of single crystal C60 and effect of oxygen
TL;DR: In this paper, the effect of oxygen on resistivity of a C 60 single crystal and the temperature (160-570K) dependence of ϱ have been studied. And the authors found that resistivity increases by a factor of 10 4 on absorption of oxygen; the estimated concentration is 4% O 2 eer C 60.
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Electrical conductivity studies of undoped solid films of C60/70
TL;DR: In this paper, the authors measured the electrical conductivity,σ, and its temperature dependence from 400 to 160 K measured in 1.5 μm thick, sublimed films of C60/70.
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Electronic transitions in KxC60 (0 ⩽ x ⩽ 6) from in situ absorption spectroscopy
TL;DR: In situ optical absorption measurements at room temperature are reported for K x C 60 (0 ⩽ x 6) as mentioned in this paper, showing an increase and line broadening in the spectral range between 2 and 2.7 eV, an increase of a new structure around 1.3 eV and a strong change for the absorption at 0.47 eV.