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Semiconductor thin film and semiconductor device

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TLDR
In this paper, an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element.
Abstract
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.

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References
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Method for manufacturing a semiconductor device

TL;DR: In this paper, a semiconductor wafer of such structure that structures with a low mechanical strength, such as suspended microstructures, are exposed at a surface thereof, detachable adhesive sheet making up protective caps for the respective suspended micro structures are formed over the semiconductor Wafer.
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TL;DR: In this article, a flat panel display comprising thin-film transistor-electroluminescent (TFT-EL) pixels is described, and an addressing scheme incorporating two TFTs and a storage capacitor is used to enable the EL pixels on the panel to operate at a duty factor close to 100%.
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Method for producing semiconductor device

Abstract: In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
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TL;DR: In this article, the authors proposed to reduce dusts under a ceiling of a carrier conveying space by so inclining the ceiling of the space in an apparatus for manufacturing semiconductor that its outside is lowered.