Structure and crystal growth of atmospheric and low-pressure chemical-vapor-deposited silicon films

TLDR: In this paper, the structure and crystal growth of undoped, asdeposited, and annealed silicon films prepared by chemical vapor deposition (CVD) and low-pressure chemical vapor injection (LPCVD) of silane have been studied with use of x-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM).

Abstract: Structure and crystal growth of undoped, as‐deposited, and annealed silicon films prepared by chemical vapor deposition (CVD) and low‐pressure chemical vapor deposition (LPCVD) of silane have been studied with use of x‐ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The grain size and a complete texture analysis are performed on CVD films grown at atmospheric pressure and temperature range 600≤Td≤805 °C, LPCVD films grown in the pressure range 0.1≤Pd≤2 Torr and temperature range 500≤Td≤650 °C and annealed amorphous CVD and LPCVD films near Ta=600 °C. We obtain systematically amorphous, strong 〈220〉 polycrystalline, and inhomogeneous partially crystallized films 〈111〉 or 〈311〉 oriented depending on the deposition conditions. The presence of a given texture is explained by a model which takes into account the specific free surface energies of the starting equilibrium forms and the extinction of some crystalline planes by {111} slow growing facets. The appearance of the 〈220〉 tex...