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Journal ArticleDOI

Suggested Single Event Upset Figure of Merit

TLDR
In this paper, the authors examined a number of concepts that are connected, directly or indirectly, with the problem of assigning a single event upset figure of merit to a specific oevice and concluded that devices should be characterized by a proton susceptibility, and by an upset rate in a reference cosmic ray environment.
Abstract
This paper examines a number of concepts that are connected, directly or indirectly, with the problem of assigning a single event upset figure of merit to a specific oevice. Single event rates depend both on device and circuitry, through the critical charge requisite for upset, and upon the device geometry and technology, which determine the target size and charge collection capability. Each of these factors must be taken into account when determining device susceptibility. Upset rates in space additionally depend on the environment. Device response in trapped proton belts and in the cosmic ray environment is sufficiently oifferent that a single susceptibility measure is inadequate. We conclude that devices should be characterizea by a proton susceptibility, and by an upset rate in a reference cosmic ray environment. We present a simple expression, based on laboratory measurement, that approximates the cosmic ray upset rate ano propose it as a figure of merit. Calculated and measured values for upset rates are sensitive to several factors. The field funneling effect is known to increase both the magnitude of collected charge and the effective sensitive circuit volume during single events relative to the static parameters. Thus, experimental sensitive area measurements obtained from single event data exceed values predicted from inspection of static circuit layout configurations. Also, more charge is collected from any specific event than is predicted by using depletion region extent to determine charge collection volumes. This effect must be included when critical upset charge values are determined from experimental upset thresholds.

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Citations
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Journal ArticleDOI

CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code

TL;DR: The Cosmic Ray on Micro-Electronics (CREME) as mentioned in this paper is a suite of programs for creating numerical models of the ionizing-radiation environment in near-Earth orbits and for evaluating radiation effects in spacecraft.
Journal ArticleDOI

Rate prediction for single event effects-a critique

TL;DR: In this article, the authors review various single event effects (SEE) testing and rate prediction methodologies and recommend standard approaches for directionization-induced SEU rate prediction, based partially on a different way of viewing the results of SEU cross-section measurements.
Journal ArticleDOI

Monte Carlo Simulation of Single Event Effects

TL;DR: In this paper, a Monte Carlo approach for estimating the frequency and character of single event effects based on a combination of physical modeling of discrete radiation events, device simulations to estimate charge transport and collection, and circuit simulations to determine the effect of the collected charge.
Journal ArticleDOI

The SEU figure of merit and proton upset rate calculations

TL;DR: In this article, the use of the SEU Figure of Merit for heavy ion upset rate prediction was re-examine, and two different orbit dependent rate coefficients were used for unhardened and hardened parts.
Journal ArticleDOI

Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions

TL;DR: In this paper, the authors investigated single event upsets in static random access memories (SRAMs) using three-dimensional (3-D) full cell device simulations for tracks that do not cross the OFF n-channel MOSFET drain.
References
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Journal ArticleDOI

Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI Devices

TL;DR: In this paper, the authors present a simple method of calculating cosmic ray upset rates and compare the results of this method to results of an exact calculation and apply both methods to the prediction of upset rates as device feature sizes are scaled to submicron dimensions.
Journal ArticleDOI

Error Analysis and Prevention of Cosmic Ion-Induced Soft Errors in Static CMOS RAMs

TL;DR: The sensitivity of polysilicon gate CMOS static RAM designs to logic upset by impinging ions has been studied using computer simulations and experimental heavy ion bombardment as discussed by the authors, and the results of the simulations are confirmed by experimental upset cross-section data.
Journal ArticleDOI

Soft Errors Due to Protons in the Radiation Belt

TL;DR: In this paper, the problem of soft errors in semiconductor devices caused by the protons in the radiation belts is examined, and the authors present a method to estimate the soft error rate in a representative satellite.
Journal ArticleDOI

CMOS RAM Cosmic-Ray-Induced-Error-Rate Analysis

TL;DR: In this paper, the authors presented a detailed analysis to predict the galactic cosmic ray induced bit error rate in three commercially availale CMOS RAM types and provided a summary of cyclotron simulation data.
Journal ArticleDOI

Effect of CMOS Miniaturization on Cosmic-Ray-Induced Error Rate

TL;DR: In this article, the effect of scaling on the single event upset rate in CMOS memory cells in the galactic cosmic ray environment typical of high altitude satellite orbits was investigated, and a detailed computer aided modeling study was performed to predict the effect.
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